Realization of ultra dense arrays of vertical silicon nanowires with defect free surface and perfect anisotropy using a top-down approach

Xiang-Lei Han; Guilhem Larrieu; Pier-Francesco Fazzini; Emmanuel Dubois

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Realization of ultra dense arrays of vertical silicon nanowires with defect free surface and perfect anisotropy using a top-down approach

机译：使用自上而下的方法实现具有无缺陷表面和完美各向异性的垂直硅纳米线的超高密度阵列

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摘要

The routine synthesis of ultra dense nanowires arrays appears as an inescapable requirement to implement future generations of nanodevices. In this study, we demonstrate the fabrication of vertical of ultra dense (4 x 10~(10) cm~(-2)) Si NWs arrays using a top-down fabrication strategy. The developed process also feature nearly perfect anisotropy (98.5%), 100% yield and an excellent surface cleanliness based a self-limiting oxidation mechanism that develops in 1D nanostructure.

机译：超致密纳米线阵列的常规合成似乎是实现下一代纳米器件的必然要求。在这项研究中，我们证明了使用自顶向下的制造策略制造垂直的超高密度（4 x 10〜（10）cm〜（-2））Si NWs阵列。所开发的工艺还具有近乎完美的各向异性（98.5％），100％的产率以及基于一维纳米结构中形成的自限氧化机制的出色表面清洁度。

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来源
《Microelectronic Engineering》 |2011年第8期|p.2622-2624|共3页
作者
Xiang-Lei Han; Guilhem Larrieu; Pier-Francesco Fazzini; Emmanuel Dubois;
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作者单位

IEMN/UMR CNRS 8520. Avenue Poincare. BP 60069, 59652 Villeneuve d'Ascq. France;

IEMN/UMR CNRS 8520. Avenue Poincare. BP 60069, 59652 Villeneuve d'Ascq. France LMS-CNRS, University de Toulouse. 7 av. du Cot Roche, 31077 Toulouse, France LAAS-CNRS, 7 av. du Col. Roche. 31077 Toulouse,France;

LMS-CNRS, University de Toulouse. 7 av. du Cot Roche, 31077 Toulouse, France;

IEMN/UMR CNRS 8520. Avenue Poincare. BP 60069, 59652 Villeneuve d'Ascq. France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
electron-beam lithography; highly dense arrays of vertical si nanowires; oxidation of si nanostructure; top-down approach;

机译：电子束光刻;垂直硅纳米线的高密度阵列;硅纳米结构的氧化;自顶向下方法;

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专利

1. Realization of Vertical Silicon Nanowire Networks with an Ultra High Density Using a Top-Down Approach [J] . Xiang-Lei Han, Guilhem Larrieu, Emmanuel Dubois Journal of nanoscience and nanotechnology . 2010,第11期

机译：使用自顶向下的方法实现具有超高密度的垂直硅纳米线网络
2. Patterned growth of vertically aligned silicon nanowire arrays for label-free DNA detection using surface-enhanced Raman spectroscopy [J] . Yi C., Li C.-W., Fu H., Analytical and bioanalytical chemistry . 2010,第7期

机译：使用表面增强拉曼光谱法测定无垂直对齐的硅纳米线阵列的垂直对准硅纳米线阵列进行标记的DNA检测
3. Top-down fabrication of very-high density vertically stacked silicon nanowire arrays with low temperature budget [J] . Michael Zervas, Davide Sacchetto, Giovanni De Micheli, Microelectronic Engineering . 2011,第10期

机译：自上而下的超低密度垂直堆叠硅纳米线阵列的制造
4. From planar to three-dimensional integration of ultra-dense silicon nanowire array for high performance fin-gate thin film transistors [C] . Xiaoxiang Wu, Han Yin, Linwei Yu International Conference on Display Technology;Society for Information Display . -1

机译：从平面到高致密硅纳米线阵列的三维集成，用于高性能翅片薄膜晶体管
5. High Sensitivity and Selectivity Vertically-Oriented Silicon Nanowire Array-Based Bioelectronic Sensor Platform [D] . Gao, Bingtao. 2021

机译：高灵敏度和选择性垂直定向硅纳米线阵列的生物电子传感器平台
6. Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy [O] . S. Yu. Turishchev, E. V. Parinova, A. K. Pisliaruk, -1

机译：使用超软X射线吸收近边缘结构光谱学对机械修饰的自上而下的硅纳米线阵列进行表面深度轮廓同步加速器研究
7. Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers [O] . Therese Gorisse, Ludovic Dupré, Pascal Gentile, 2013

机译：在<100>硅晶片上的多孔氧化铝模板中生长的高度组织化和密集的垂直硅纳米线阵列

Realization of ultra dense arrays of vertical silicon nanowires with defect free surface and perfect anisotropy using a top-down approach

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