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首页> 外文期刊>Microelectronic Engineering >Characterization and performance of Schottky diode based on wide band gap semiconductor ZnO using a low-cost and simplified sol-gel spin coating technique
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Characterization and performance of Schottky diode based on wide band gap semiconductor ZnO using a low-cost and simplified sol-gel spin coating technique

机译：低成本简化的溶胶-凝胶旋涂技术表征基于宽带隙半导体ZnO的肖特基二极管及其性能

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摘要

In this study, a Schottky diode based on wide band gap semiconductor ZnO was fabricated on p-type Si substrate using sol-gel spin coating method. Al/ZnO/p-Si diode indicates a rectification behavior. At lower voltages, the forward current of the diode was found to obey the intrinsic thermally generated charge carriers and at relatively higher voltages, the current mechanism of the diode is controlled by a space charge limited conduction mechanism. Under reverse bias conditions, the current-voltage characteristics of the diode exhibit the lower current as compared under forward bias, indicating the existence of a current limitation mechanism induced by two field lowering mechanisms which are Poole-Frenkel and Schottky mechanisms. The parameters, series resistance Rs, the ideality factor n and the barrier height eo of the diode were determined by performing different plots obtained from the experimental forward bias current-voltage. The capacitance measurements show that the values of capacitance were almost independent of the forward bias under various frequencies. The higher values of the capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the ZnO.
机译：本文采用溶胶-凝胶旋涂法在p型Si衬底上制备了基于宽带隙半导体ZnO的肖特基二极管。 Al / ZnO / p-Si二极管表示整流行为。在较低的电压下，发现二极管的正向电流服从固有的热产生电荷载流子，而在较高的电压下，二极管的电流机制由空间电荷受限的传导机制控制。在反向偏置条件下，二极管的电流-电压特性与在正向偏置条件下相比具有较低的电流，这表明存在由两种场降低机制（即Poole-Frenkel和Schottky机制）引起的限流机制。参数，串联电阻Rs，理想因子n和势垒高度eo的二极管是通过执行从实验性正向偏置电流-电压获得的不同图来确定的。电容测量结果表明，在各种频率下，电容值几乎与正向偏置无关。低频下较高的电容值归因于与ZnO处于平衡状态的界面态导致的多余电容。

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  • 来源
    《Microelectronic Engineering》 |2011年第9期|p.2894-2899|共6页
  • 作者

    A.A.M. Farag; W.A. Farooq; F. Yakuphanoglu;

  • 作者单位

    Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Cairo U757, Egypt;

    Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;

    Department of Metallurgical and Materials Engineering, Firat University, Elazig, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    schottky contact; n-zno; barrier height; series resistance;

    机译：肖特基接触;n-zno;势垒高度;串联电阻;

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