...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Microelectronic Engineering >Effects Of Size, Humidity, And Aging On Particle Removal From Si Wafers
【24h】

Effects Of Size, Humidity, And Aging On Particle Removal From Si Wafers

机译：尺寸，湿度和时效对硅晶片上颗粒去除的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effects of particle size, humidity, and aging time on particle removal from silicon wafers were investigated with a laser shock wave at a constant removal force. Particle adhesion force, shock wave cleaning force, and the removal moment ratio were calculated and related to particle removal efficiency (PRE). The presence of capillary forces and particle deformation significantly increased the adhesion force. In order to control the humidity and magnitude of deformation, humidity and aging time were varied during particle removal tests. PRE decreased rapidly for particle sizes below 1 μm as the humidity and contact area increase. The calculations of removal moment ratios agreed well with the experimental observations. Both humidity and process time should be controlled to avoid the aging of particles and to achieve high PRE for particles smaller than 1 μrn.
机译：用恒定冲击力下的激光冲击波研究了粒径，湿度和时效时间对从硅片上去除颗粒的影响。计算颗粒粘附力，冲击波清洁力和去除力矩比，并与颗粒去除效率（PRE）相关。毛细作用力和颗粒变形的存在显着增加了粘附力。为了控制湿度和变形量，在去除颗粒的测试中改变了湿度和老化时间。当湿度和接触面积增加时，对于小于1μm的颗粒，PRE迅速降低。去除力矩比的计算与实验观察结果非常吻合。应当控制湿度和处理时间，以避免颗粒老化，并实现小于1μm颗粒的高PRE。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号