Vertically Stacked Non-volatile Memory Devices - Material Considerations

M. Godlewski; E. Guziewicz; J. Szade; A. Wojcik-Glodowska; L. Wachnicki; T. Krajewski; K. Kopalko; R. Jakiela; S. Yatsunenko; E. Przezdziecka; P. Kruszewski; N. Huby; G. Tallarida; S. Ferrari

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Vertically Stacked Non-volatile Memory Devices - Material Considerations

机译：垂直堆叠的非易失性存储设备-材料注意事项

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Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties - from heavily n-type to p-type. Parameters of constructed Schottky and p-n junction are good enough for their application in a new generation of memory devices with cross-bar architecture.

机译：描述了在低温下通过原子层沉积生长的ZnO薄膜的特性。通过选择合适的前驱体及其脉冲，我们获得了具有可控电性能的膜-从重n型到p型。肖特基和p-n结的构造参数足以在具有交叉开关架构的新一代存储设备中应用。

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来源
《Microelectronic Engineering》 |2008年第12期|p.2434-2438|共5页
作者
M. Godlewski; E. Guziewicz; J. Szade; A. Wojcik-Glodowska; L. Wachnicki; T. Krajewski; K. Kopalko; R. Jakiela; S. Yatsunenko; E. Przezdziecka; P. Kruszewski; N. Huby; G. Tallarida; S. Ferrari;
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作者单位

Department of Solid State Spectroscopy, Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
zinc oxide; atomic layer deposition; cross-bar memories; electrical properties;

机译：氧化锌;原子层沉积;交叉记忆;电性能;

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专利

1. New Selector Based On Zinc Oxide Grown By Low Temperature Atomic Layer Deposition For Vertically Stacked Non-volatile Memory Devices [J] . N. Huby, G. Tallarida, M. Kutrzeba, Microelectronic Engineering . 2008,第12期

机译：垂直堆叠非易失性存储器件中基于低温原子层沉积生长的氧化锌的新型选择器
2. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues [J] . Noe Pierre, Vallee Christophe, Hippert Francoise, Semiconductor science and technology . 2018,第1期

机译：非易失性存储设备的相变材料：从技术挑战到材料科学问题
3. Application of deposited by ALD HfO_2 and Al_2O_3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices [J] . Robert Mroczynski, Andrzej Taube, Sylwia Gierattowska, Applied Surface Science . 2012,第21期

机译：ALD HfO_2和Al_2O_3层沉积在非易失性半导体存储（NVSM）器件的双栅介质堆叠中的应用
4. Comparative study on nanocrystal embedded gate dielectric and oxide nitride oxide stack dielectric GAA MOSFET non-volatile memory devices [C] . Sengupta Amretashis, Sarkar Chandan Kumar 2012 International Conference on Informatics, Electronics amp; Vision. . 2012

机译：纳米晶嵌入式栅介质和氮氧化物叠层介质GAA MOSFET非易失性存储器件的比较研究
5. Scalability of Phase Change Materials in Non-Volatile Memory Devices. [D] . Jackson, Biyun Li. 2011

机译：非易失性存储设备中相变材料的可伸缩性。
6. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide [O] . Joong-Hyun Park, Myung-Hun Shin, Jun-Sin Yi 2019

机译：以富含Si的SiOX作为电荷陷阱层和铟锡锌氧化物的透明非易失性存储器件的特性
7. High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers [O] . Tsuchiya Yoshishige, Kurihara T., Saito D., 2007

机译：采用宏观极化堆栈的高速和非易失性存储器件，由与工程隧道氧化物阻挡层相互连接的双浮动栅极组成
8. Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces;Electron Device Letters [R] . Habermehl, S. , Nasby, R. D. , Rightley, M. J. 1999

机译：用氮化siO（2）/ si（100）界面制备的sONOs非易失性存储器堆栈的循环耐久性;电子器件字母

Vertically Stacked Non-volatile Memory Devices - Material Considerations

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