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Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces;Electron Device Letters

机译：用氮化siO（2）/ si（100）界面制备的sONOs非易失性存储器堆栈的循环耐久性;电子器件字母

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The effects of nitrided SiO(sub 2)/Si(100) interfaces upon cycling endurance in silicon-oxide- nitride-oxide-silicon (SONOS) non-volatile memory transistors are investigated. Analysis of MOSFET sub-threshold characteristics indicate cycling degradation to be a manifestation of interface state (D(sub it) ) generation at the tunnel oxide/silicon interface. After 10(sup 6) write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance with (Delta)D(sub it)=3x10(sup 12) V(sup -1)cm(sup -2), compared to (Delta)D(sub it)=2x10(sup 13) V(sup -l)cm(sup -2) for non-nitrided tunnel oxides. Additionally, if the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. From this observation it is concluded that latent nitridation of the tunnel oxidehilicon interface occurs during steam oxide cap formation.

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Habermehl, S. ; Nasby, R. D. ; Rightley, M. J.;
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年度 1999
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Silicon Oxides; Semiconductor Storage Devices; Silicon; Interfaces; Performance;

机译：硅氧化物;半导体存储器件;硅;接口;性能;

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专利

1. Non-volatile organic memory devices comprising SiO2 and C60 showing 104 switching cycles [J] . Siebeneicher P. Applied Physics Letters . 2012,第19期

机译：包含SiO2和C60的非易失性有机存储设备，其开关周期为10 4
2. Non-volatile organic memory devices comprising SiO_2 and C_(60) showing 10~4switching cycles [J] . P. Siebeneicher, H. Kleemann, K. Leo, Applied Physics Letters . 2012,第19期

机译：包含SiO_2和C_（60）的非易失性有机存储器件，显示10〜4个开关周期
3. Investigation of SiO_2/HfO_2 gate stacks for application to non-volatile memory devices [J] . J. Buckley, B. De Salvo, G. Ghibaudo, Solid-State Electronics . 2005,第11期

机译：SiO_2 / HfO_2栅叠层用于非易失性存储器件的研究
4. Novel soft erase and re-fill methods for a P/sup +/-poly gate nitride trapping non-volatile memory device with excellent endurance and retention properties [C] . Hang-Ting Lue, Yen-Hao Shih, Kuang Yen Hsieh, Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International . 2005

机译：新型P / sup +/-多晶硅栅氮化物俘获非易失性存储器件的软擦除和重新填充方法，具有出色的耐久性和保持性
5. Polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memory devices design, fabrication and characterization. [D] . Bu, Jiankang. 2001

机译：多晶硅-氮氧化物-氧化硅（SONOS）非易失性半导体存储器件的设计，制造和表征。
6. Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices [O] . Dilip K. Maiti, Sudipto Debnath, Sk. Masum Nawaz, -1

机译：酰胺-吩嗪的依赖成分的纳米电子学：非易失性RRAM和WORM存储设备
7. High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers [O] . Tsuchiya Yoshishige, Kurihara T., Saito D., 2007

机译：采用宏观极化堆栈的高速和非易失性存储器件，由与工程隧道氧化物阻挡层相互连接的双浮动栅极组成

Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces;Electron Device Letters

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