PURPOSE: A substrate-oxide-nitride-oxide-silicon(SONOS) cell is provided to eliminate the necessity of planarizing an interlayer dielectric after a metallization process by preventing a step from being formed between a memory cell core region and a peripheral circuit region in a non-volatile memory device composed of the SONOS cell. CONSTITUTION: A semiconductor substrate(501) is of the first conductivity type. The first silicon oxide layer(505) is formed on the semiconductor substrate, corresponding to the length of a channel(504) of a transistor. A silicon nitride layer(506) is formed on the first silicon oxide layer. The second silicon oxide layer(507) is formed on the silicon nitride layer. A gate(508) is formed on the second silicon oxide layer. A source(502) of the second conductivity type and a drain(503) of the second conductivity type are formed on the semiconductor substrate, separated from each other by the length of the gate. A bitline contact hole comes in contact with the drain junction.
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