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Integration and characterization of gas cluster processing for copper interconnects electromigration improvement

机译：用于铜互连电迁移改进的气体团簇处理的集成和表征

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Basic physical properties as well as electrical and reliability performance of Infusion~(TM) processing were evaluated. This approach, proposed as an alternative to CuSiN and electrolessly deposited Co-alloys, was shown to join the benefits of these two techniques without well-known associated drawbacks. Indeed, it is a uniform process, acting as an efficient Cu diffusion barrier, which does not require specific integration development. Different processes were introduced in a multi-level interconnect stack using ULK/USG stack as IMD, showing excellent electrical properties, and three times electromigration time-to-failure improvement with respect to standard SiCN barrier. However, it was shown that existing process conditions lead to some introduction of N atoms into ULK dielectric, showing there is still some room for process optimization in architectures using un-capped ULKs, to keep the benefits of EM improvement and aggressive effective dielectric constant.
机译：评估了Infusion〜（TM）处理的基本物理性能以及电气和可靠性性能。该方法被提议作为CuSiN和化学沉积共合金的替代方法，显示出结合了这两种技术的优点而没有众所周知的相关缺点。实际上，这是一个统一的过程，可作为有效的Cu扩散阻挡层，不需要专门的集成开发。在使用ULK / USG堆栈作为IMD的多层互连堆栈中引入了不同的工艺，显示出优异的电气性能，并且相对于标准SiCN势垒，电迁移失效时间提高了三倍。但是，结果表明，现有工艺条件导致将N原子引入ULK电介质中，这表明在使用未封端ULK的体系结构中，仍有一些工艺优化的空间，以保持EM改进和有效的有效介电常数的优势。

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