Dielectric enhancement in interface-modified BaTiO_3/SrTiO_3 multilayered films prepared by pulsed laser deposition

Dazhi Hu; Mingrong Shen; Wenwu Cao

首页> 外文期刊>Microelectronic Engineering >Dielectric enhancement in interface-modified BaTiO_3/SrTiO_3 multilayered films prepared by pulsed laser deposition

【24h】

Dielectric enhancement in interface-modified BaTiO_3/SrTiO_3 multilayered films prepared by pulsed laser deposition

机译：脉冲激光沉积制备界面改性BaTiO_3 / SrTiO_3多层膜的介电增强

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Pulsed-laser-deposited polycrystalline BaTiO_3/SrTiO_3 multilayered films on Pt/Ti/SiO_2/Si substrates have been fabricated with inter-facial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10 KHz. This is about two times that of the identically prepared Ba_(0.5)Sr_(0.5)TiO_3/ Ba_(0.5)Sr_(0.5)TiO_3 homolayered and uniform Ba_(0.5)Sr_(0.5)TiO_3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure.

机译：通过在两个相邻沉积之间的时间间隔内降低氧气压力，通过界面改性，在Pt / Ti / SiO_2 / Si衬底上制备了脉冲激光沉积的多晶BaTiO_3 / SrTiO_3多层膜。发现异质层结构的形成对于获得介电增强是必不可少的。这样的异层膜具有1201的大介电常数，在10KHz下的损耗角正切低于0.1。这是相同制备的Ba_（0.5）Sr_（0.5）TiO_3 / Ba_（0.5）Sr_（0.5）TiO_3均相且均匀的Ba_（0.5）Sr_（0.5）TiO_3膜的约两倍。介电性能的提高归因于由于在较低的氧气压力下形成了氧空位而导致具有可控空间电荷的界面区域的存在。

著录项

来源
《Microelectronic Engineering》 |2006年第3期|p.553-556|共4页
作者
Dazhi Hu; Mingrong Shen; Wenwu Cao;
展开▼
作者单位

Department of Physics, Suzhou University, Suzhou 215006, People's Republic of China;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
dielectrics; thin films; multilayer structure;

机译：电介质;薄膜;多层结构;

相似文献

外文文献
中文文献
专利

1. Epitaxial growth and dielectric properties of BSZT thin films on SrTiO_3: NB single crystal substrate prepared by pulsed laser deposition [J] . Jiang L.L., Tang X.G., Jiang Y.P., Surface & Coatings Technology . 2013,第Null期

机译：脉冲激光沉积制备SrTiO_3：NB单晶衬底上的BSZT薄膜的外延生长和介电性能
2. Epitaxial growth and dielectric properties of BSZT thin films on SrTiO_3: NB single crystal substrate prepared by pulsed laser deposition [J] . Jiang L.L., Tang X.G., Jiang Y.P., Surface & Coatings Technology . 2013,第Null期

机译：脉冲激光沉积制备SrTiO_3：NB单晶衬底上的BSZT薄膜的外延生长和介电性能
3. Enhanced magnetoresistance of multilayered thin films prepared by pulsed laser deposition [J] . Y. Yang, G.L. Yuan, L. Zhou, Materials Letters . 2003,第18期

机译：通过脉冲激光沉积制备的多层薄膜的增强的磁阻
4. Enhanced dielectric properties of multilayered BiFeO_3/BaTiO_3 capacitors deposited by pulsed laser deposition [C] . Savita Sharma, Monika Tomar, Nitin K. Puri, International Conference on Emerging Technologies: Micro to Nano . 2016

机译：通过脉冲激光沉积沉积的多层BIFEO_3 / BATIO_3电容器的增强介电性能
5. The deposition and characterization of high dielectric constant films prepared by pulsed reactive DC magnetron sputtering technique. [D] . Kim, Jin-Young. 2000

机译：脉冲反应直流磁控溅射技术制备的高介电常数薄膜的沉积和表征。
6. Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition [O] . Xiankun Cheng, Qiang Gao, Kaifeng Li, 2019

机译：脉冲激光沉积制备6H-SiC（0001）衬底上VO2薄膜的增强的相变特性
7. Epitaxial growth and dielectric properties of BSZT thin films on SrTiO3 : NB single crystal substrate prepared by pulsed laser deposition [O] . Jiang LL, Tang XG, Jiang YP, 2013

机译：脉冲激光沉积SrTiO3：NB单晶衬底上BSZT薄膜的外延生长和介电性能。

Dielectric enhancement in interface-modified BaTiO_3/SrTiO_3 multilayered films prepared by pulsed laser deposition

摘要

著录项

相似文献

相关主题

期刊订阅