Simulation of multiple-gate quantum stub transistor

Edval J.P. Santos; Alexandre B. Guerra

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Simulation of multiple-gate quantum stub transistor

机译：多栅量子截线晶体管的仿真

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The quantum stub transistor has the potential for ultrafast, ultra low power signal processing in high density integrated circuits. However, the single gate stub transistor presents the shortcoming of requiring highly precise gate voltage to close the channel. By using a tight-binding model, we have shown that the multiple gate configuration can be used to reduce this problem. Besides, stubbed waveguides are known to develop a band structure, we propose that a stubbed wire with spin-orbit coupling (Rashba effect) could be used for spin polarized transport. This is an interesting feature, which can be used for spintronics devices. We also discuss how the Rashba effect is incorporated in our simulation program.

机译：量子短线晶体管具有在高密度集成电路中进行超快速，超低功耗信号处理的潜力。但是，单栅截线晶体管存在需要高精度的栅电压来关闭沟道的缺点。通过使用紧密绑定模型，我们已显示多门配置可用于减少此问题。此外，已知短截线波导会形成能带结构，我们建议可以将具有自旋轨道耦合（Rashba效应）的短截线用于自旋极化传输。这是一个有趣的功能，可以用于自旋电子设备。我们还将讨论如何将Rashba效应纳入我们的仿真程序。

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来源
《Microelectronic Engineering》 |2005年第4期|p.544-552|共9页
作者
Edval J.P. Santos; Alexandre B. Guerra;
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作者单位

Laboratory for Devices and Nanostructures, Departamento de Eletronica e Sistemas, Universidade Federal de Pernambuco, C.P. 7800, 50670-000, Recife-PE, Brazil;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
stub transistor; simulation; multiple gate;

机译：短截晶体管;仿真;多栅极;

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Simulation of multiple-gate quantum stub transistor

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