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首页> 外文期刊>Japanese journal of applied physics >Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor
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Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor

机译：隧道耦合双纳米晶硅量子点与多栅极单电子晶体管的集成

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摘要

We report on integration of double nanocrystalline silicon quantum dots (nc-Si QDs) of approximately 10 nm in diameter onto the multiple-gate single-electron transistor (SET) used as a highly-sensitive charge polarization detector. The SET with a single charging island is first patterned lithographically on silicon-on-insulator, and the multiple-gate bias dependence of the Coulomb current oscillation is characterized at 4.2 K. The coupling capacitance parameters between the SET charging island and the multiple-gate are estimated and compared with those obtained by using the three-dimensional capacitance simulation. Double nc-Si QDs are then deposited in the immediate vicinity of the charging island of the SET by using the very-high frequency plasma deposition technique. We perform the single-electron circuit simulations and demonstrate that only ±e charge polarization of the double QDs can be sensed as a shift of the Coulomb oscillation peaks.
机译：我们报告了直径约10 nm的双纳米晶体硅量子点（nc-Si QDs）集成到用作高灵敏度电荷极化检测器的多栅极单电子晶体管（SET）上的过程。首先在绝缘体上硅上对具有单个充电岛的SET进行光刻构图，并将库仑电流振荡的多栅极偏置依赖性定为4.2K。SET充电岛与多栅极之间的耦合电容参数估计并与使用三维电容模拟获得的结果进行比较。然后，使用超高频等离子体沉积技术将双nc-Si QD沉积在SET的充电岛附近。我们执行单电子电路仿真，并证明，随着库仑振荡峰的移动，只能检测到双QD的±e电荷极化。

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