A TCAD evaluation of a single Bulk-BICS with integrative memory cell

Simionovski A.; Wirth G. I; Schrimpf R. D.; Bhuva B. L.

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A TCAD evaluation of a single Bulk-BICS with integrative memory cell

机译：具有集成存储单元的单个Bulk-BICS的TCAD评估

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This work presents a new topology for a Bulk-Built-in Current Sensor (Bulk-BICS) in a circuit for monitoring the effects of single energetic particle strikes on PMOS and NMOS transistors. Several of these sensors may have their outputs grouped in parallel, increasing integration density, which reduces the area overhead for the proposed Bulk-BICS technique. The circuit was designed in a 40-nm technology node using circuit simulation and evaluated with transistor-level Technology Computer-Aided Design (TCAD) software.

机译：这项工作提出了一种用于电路中的大容量内置电流传感器（Bulk-BICS）的新拓扑，用于监视单个高能粒子撞击对PMOS和NMOS晶体管的影响。这些传感器中的几个可能将其输出并行分组，从而提高了集成密度，从而减少了所建议的Bulk-BICS技术的面积开销。该电路是使用电路仿真在40纳米技术节点中设计的，并使用晶体管级技术计算机辅助设计（TCAD）软件进行了评估。

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来源
《Microelectronics journal》 |2018年第10期|62-68|共7页
作者
Simionovski A.; Wirth G. I; Schrimpf R. D.; Bhuva B. L.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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A TCAD evaluation of a single Bulk-BICS with integrative memory cell

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