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首页> 外文期刊>Microelectronics journal >A 0.5-V-supply, 37.8-nW, 17.6-ppm/℃ switched-capacitor bandgap reference with second-order curvature compensation
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A 0.5-V-supply, 37.8-nW, 17.6-ppm/℃ switched-capacitor bandgap reference with second-order curvature compensation

机译：具有二阶曲率补偿的0.5V电源，37.8nW，17.6ppm /℃的开关电容器带隙基准

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摘要

This paper presents a switched-capacitor (SC) bandgap reference (BGR) with second-order curvature compensation for ultra-low power systems. The gate-source voltage of a sub-threshold MOSFET is proposed to implement the second-order curvature compensation voltage in this work. And then, a SC network is used, not only to add the second-order voltage and the first-order one together, but also to fulfill the summing weight effectively and precisely. In this way, the silicon area and power consumption can be reduced simultaneously. Furthermore, the design methodology of summing weight is investigated, and thus the temperature coefficient (TC) can be significantly reduced. The proposed SC-BGR was implemented and simulated in a CMOS 0.18 mu m process, the average output voltage is 426.1 mV, achieving a TC of 17.6 ppm/degrees C from -20 to 100 degrees C under a 0.5 V minimum supply voltage. With the help of the SC architecture, a small chip area of 0.0975 mm(2) is achieved with only 37.8-nW power consumption.
机译：本文提出了一种用于超低功率系统的具有二阶曲率补偿的开关电容器（SC）带隙基准（BGR）。提出了一个亚阈值MOSFET的栅极-源极电压来实现这项工作中的二阶曲率补偿电压。然后，使用SC网络，不仅可以将二阶电压和一阶电压相加，而且可以有效，精确地满足求和权重。这样，可以同时减小硅面积和功耗。此外，研究了求和重量的设计方法，因此可以显着降低温度系数（TC）。拟议的SC-BGR是在CMOS 0.18μm工艺中实施和仿真的，平均输出电压为426.1 mV，在最小电源电压为0.5 V的情况下，从-20到100℃的TC达到17.6 ppm /℃。借助SC架构，仅37.8nW的功耗即可实现0.0975 mm（2）的小芯片面积。

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  • 来源
    《Microelectronics journal》 |2019年第5期|136-143|共8页
  • 作者

    Liu Yang; Li Bin; Chen Zhaoquan; Chen Zhijian; Huang Mo; Lu Yan;

  • 作者单位

    South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Guangdong, Peoples R China;

    South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Guangdong, Peoples R China;

    South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Guangdong, Peoples R China;

    South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Guangdong, Peoples R China;

    South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Guangdong, Peoples R China;

    Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Bandgap reference; Switched-capacitor; High order curvature compensation; Ultra-low power;

    机译：带隙基准;开关电容器;高阶曲率补偿;超低功率;

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