A novel indirect read technique based SRAM with ability to charge recycle and differential read for low power consumption, high stability and performance

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A novel indirect read technique based SRAM with ability to charge recycle and differential read for low power consumption, high stability and performance

机译：一种新颖的基于SRAM的间接读取技术，具有充电循环和差分读取的能力，可实现低功耗，高稳定性和高性能

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Read noise insertion problem of conventional read method of 6T-SRAM cell has forced to think about indirect read. Indirect read though eliminates read noise insertion but also take away the capability to use differential sensing thus leading to more energy and time consumption. Charge recycling concept must be followed by the SRAM cell to reduce energy consumption. An indirect read technique based SRAM is proposed which is capable to follow differential sensing along with following charge recycling technique. Thus it makes the proposed SRAM cell high stable, fast and low energy consuming. Theoretical estimation states that write and read energy consumption of the proposed cell is 12.5% and 25% smaller than those of the compared RDFD-SRAM. Stability analysis shows that the read SNM of the proposed cell which is the most critical stability index is same as its retention SNM and is 317% of the read SNM of conventional 6T-SRAM. The delay analysis also states the fastness of proposed cell.

机译：传统的6T-SRAM单元读取方法的读取噪声插入问题迫使人们不得不考虑间接读取。间接读取虽然消除了读取噪声的插入，但也剥夺了使用差分感应的能力，从而导致更多的能源和时间消耗。 SRAM单元必须遵循电荷循环的概念，以减少能耗。提出了一种基于SRAM的间接读取技术，该技术能够跟随差分检测以及随后的电荷循环技术。因此，这使得所提出的SRAM单元高度稳定，快速且能耗低。理论估计表明，拟议单元的读写能耗比比较的RDFD-SRAM分别低12.5％和25％。稳定性分析表明，拟议单元的读取SNM是最关键的稳定性指标，与其保留SNM相同，是常规6T-SRAM读取SNM的317％。延迟分析还说明了所建议小区的牢度。

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《Microelectronics journal》 |2020年第3期|104723.1-104723.11|共11页
作者

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作者单位

Silicon Inst Technol Dept Elect & Instrumentat Bhubaneswar 751024 India;

KIIT Deemed Be Univ Sch Elect Engn Bhubaneswar 751024 India;

Natl Inst Technol Dept Elect & Commun Engn Rourkela 769008 India;

Vellore Inst Technol Sch Elect Engn Amaravati India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Charge recycling; Indirect read; Half-selected cell; Single ended write; SRAM; Leakage current;

机译：充电回收;间接阅读;半选单元;单端写;SRAM;漏电流;

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专利

1. A Low-Power SRAM Using Bit-Line Charge-Recycling for Read and Write Operations [J] . Yang B.-D. Solid-State Circuits, IEEE Journal of . 2010,第10期

机译：使用位线电荷循环进行读取和写入操作的低功耗SRAM
2. A novel design of low power and high read stability Ternary SRAM (T-SRAM), memory based on the modified Gate Diffusion Input (m-GDI) method in nanotechnology [J] . Abiri Ebrahim, Darabi Abdolreza Microelectronics journal . 2016,第deca期

机译：基于纳米技术中改进的门扩散输入（m-GDI）方法的低功耗，高读取稳定性三元SRAM（T-SRAM）存储器的新颖设计
3. A Differential Data-Aware Power-Supplied (D$^{2}$AP) 8T SRAM Cell With Expanded Write/Read Stabilities for Lower VDDmin Applications [J] . Chang M.-F., Wu J.-J., Chen K.-T., Solid-State Circuits, IEEE Journal of . 2010,第6期

机译：具有扩展的写入/读取稳定性的差分数据感知功率上电（D $ ^ {2} $ AP）8T SRAM单元，适用于更低的VDDmin应用
4. A low power, high speed FinFET based 6T SRAM cell with enhanced write ability and read stability [C] . Rahaprian Mudiarasan Premavathi, Qiang Tong, Ken Choi, International SoC Design Conference . 2016

机译：基于低功率，高速FinFET的6T SRAM单元，具有增强的写入能力和读取稳定性
5. High performance, high stability and low power SRAM design by using carbon nanotube field effect transistors. [D] . Wang, Wei. 2012

机译：使用碳纳米管场效应晶体管的高性能，高稳定性和低功耗SRAM设计。
6. Using SRAM Based FPGAs for Power-Aware High Performance Wireless Sensor Networks [O] . Juan Valverde, Andres Otero, Miguel Lopez, 2012

机译：使用基于SRAM的FPGA进行功率感知的高性能无线传感器网络
7. Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications [O] . Pooran Singh, Santosh Kumar Vishvakarma 2017

机译：超低功耗，工艺容差10T（pT10T）sRam，具有改进的物联网（IoT）应用的读/写能力

A novel indirect read technique based SRAM with ability to charge recycle and differential read for low power consumption, high stability and performance

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