An enhanced model for InGaP/GaAs heterojunction bipolar transistor

Yuxia Shi; Yan Wang

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An enhanced model for InGaP/GaAs heterojunction bipolar transistor

机译：InGaP / GaAs异质结双极晶体管的增强模型

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摘要

This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with the collector field under high current. The extraction flow is demonstrated. The new model has been verified by measurements on I-V, S-parameter, cut-off frequency and large-signal conditions.

机译：本文提出了一种基于垂直双极公司间（VBIC）模型的改进的InGaP / GaAs异质结双极晶体管（HBT）模型。考虑到异质结效应，提出了新的传输电流表达式。集电极电容由于移动电荷调制而产生，并且改进了渡越时间公式，以解决大电流下电子速度随集电极场的变化。演示了提取流程。新模型已通过在I-V，S参数，截止频率和大信号条件下进行的测量得到验证。

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来源
《Microelectronics journal》 |2013年第2期|163-168|共6页
作者
Yuxia Shi; Yan Wang;
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作者单位

Institute of Microelectronics, Tsinghua University, Beijing 100084, PR China;

Institute of Microelectronics, Tsinghua University, Beijing 100084, PR China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
heterojunction bipolar transistors (HBT); InGaP/GaAs; large signal model; VBIC model;

机译：异质结双极晶体管（HBT）;InGaP / GaAs;大信号模型VBIC模型;

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专利

1. Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors [J] . Wu Yi-Chen, Tsai Jung-Hui, Chiang Te-Kuang, Semiconductors . 2015,第10期

机译：InGaP / GaAs / GaAsBi与InGaP / GaAs异质结双极晶体管的比较研究
2. COMPARATIVE INVESTIGATION OF INGAP/GAAS/GAASBI AND INGAP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS [J] . WU YI-CHEN, TSAI JUNG-HUI, CHIANG TE-KUANG, Физика и техника полупроводников . 2015,第10期

机译：INGAP / GAAS / GAASBI与INGAP / GAAS异质结双极晶体管的比较研究
3. COMPARATIVE INVESTIGATION OF INGAP/GAAS/GAASBI AND INGAP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS [J] . WU YI-CHEN, TSAI JUNG-HUI, CHIANG TE-KUANG, Физика и техника полупроводников . 2015,第10期

机译：比较研究 INGAP / GAAS / GAASBI 和 INGAP / GaAs异质双极型晶体管
4. Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor [C] . Yarborough R., Landini B., Welser R., Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest . 2002

机译：InGaP / InGaAsN / GaAs N-p-N双异质结双极晶体管增强的CDMA性能
5. Low-pressure metalorganic chemical vapor deposition of high-gain InGaP/GaAs heterojunction bipolar transistors [D] . Yang, Qinghong (Jack). 1999

机译：高增益Ingap / GaAs异质结双极晶体管的低压金属化学气相沉积
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors [O] . Yan BP, Hsu CC, Yang ES, 2004

机译：InGap / Gaassb / Gaas双异质结双极晶体管中的电流传输机制
8. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor [R] . Chang, P. C. , Baca, A. G. , Li, N. Y. , 2000

机译：InGap / InGaasN / Gaas NpN双异质结双极晶体管

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

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