Properties of Ni_xZn_(1_x))Fe_2O_4 thick films at microwave frequencies

D.C. Kulkarni; S.P. Patil; Vijaya Puri

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Properties of Ni_xZn_(1_x))Fe_2O_4 thick films at microwave frequencies

机译：Ni_xZn_（1_x））Fe_2O_4厚膜的微波频率特性

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The thick film Ni_xZn_(1_x))Fe_2O_4 on alumina substrate was prepared by screen printing of the ferrite powder synthesized by chemical co-precipitation method using nitrate precursors. These Ni_xZn_(1_x))Fe_2O_4 thick films of varying x were characterized by X-ray diffraction, FTIR spectroscopy and SEM (scanning electron microscopy). The permittivity and permeability were measured by overlay technique. Voltage standing wave ratio method was also used to measure the dielectric constant. The permittivity was found to increase with Ni content varying between 13 and 18. The permeability was ～3.01. The overlay technique provides an easy method for measurement of permittivity and permeability of ferrite thick film.

机译：通过使用硝酸盐前体通过化学共沉淀法丝网印刷的铁氧体粉末的丝网印刷，制备了氧化铝基板上的厚膜Ni_xZn_（1_x））Fe_2O_4。通过X射线衍射，FTIR光谱和SEM（扫描电子显微镜）表征这些不同x的Ni_xZn_（1_x））Fe_2O_4厚膜。介电常数和磁导率通过覆盖技术测量。电压驻波比法也用于测量介电常数。发现介电常数随Ni含量在13和18之间变化而增加。磁导率约为3.01。覆盖技术为测量铁氧体厚膜的介电常数和磁导率提供了一种简便的方法。

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来源
《Microelectronics journal》 |2008年第2期|p.248-252|共5页
作者
D.C. Kulkarni; S.P. Patil; Vijaya Puri;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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Properties of Ni_xZn_(1_x))Fe_2O_4 thick films at microwave frequencies

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