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Optimisation of the number of IGBT devices in a series-parallel string

机译：串并串形式的IGBT器件数量的优化

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High-power semiconductor switches can be realised by connecting existing devices in series and parallel. The number of devices in series depends on the operating voltage of an application and the individual device voltage rating. For a given application, the use of higher voltage rated IGBTs leads to a fewer number of devices and vice versa. The total power loss of the series string equals to the sum of individual IGBT power losses and total loss increases with the increase in operating frequency. The level of increase in power loss depends on the device characteristics. For high current operation, the minimum number of devices depends on the current rating of individual device. In this paper, series IGBT string of six 1.2kV, four 1.7 kV, two 3.3 kV and a single 6.5 kV IGBTs are simulated for a 4.5 kV/100 A application and power losses are analysed for different frequencies and duty cycles. This power loss analysis is extended for commercial IGBTs to compare the simulation results. The number of devices for minimum power loss depends on operating frequencies and power savings are significant both at low and high frequencies. In addition to the power losses, the other important issues in optimising the number of IGBTs are described in this paper. When IGBT modules are connected in parallel the principle of derating is applied to obtained reliable operation. This is explained with some examples.
机译：通过串联和并联连接现有设备，可以实现大功率半导体开关。串联设备的数量取决于应用的工作电压和单个设备的额定电压。对于给定的应用，使用额定电压更高的IGBT会导致设备数量减少，反之亦然。串联串的总功率损耗等于各个IGBT功率损耗之和，并且总损耗随着工作频率的增加而增加。功率损耗的增加程度取决于设备的特性。对于高电流运行，设备的最小数量取决于单个设备的额定电流。本文针对4.5 kV / 100 A应用模拟了六个1.2kV，四个1.7 kV，两个3.3 kV和一个6.5 kV IGBT的串联IGBT串，并分析了不同频率和占空比下的功率损耗。此功率损耗分析扩展到了商用IGBT，以比较仿真结果。最小功率损耗的设备数量取决于工作频率，在低频和高频情况下，功率节省都非常可观。除了功率损耗外，本文还介绍了优化IGBT数量时的其他重要问题。当IGBT模块并联时，应用降额原理以获得可靠的运行。通过一些示例对此进行解释。

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