Temperature dependence of Si-GaAs energy gap using photoconductivity spectra

G.E. Zardas; P.H. Yannakopoulos; M. Ziska; Chr. Symeonides; M. Vesely; P.C. Euthymiou

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Temperature dependence of Si-GaAs energy gap using photoconductivity spectra

机译：Si-GaAs能隙的光导光谱与温度的关系

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In the present work, we study the Energy gap (E_g) of the Si-GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E_g and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature.

机译：在目前的工作中，我们使用光电导方法研究了在250至350 K范围内的各种温度下，Si-GaAs的能隙（E_g），以便找到E_g与温度之间的关系。我们已经测量了每个温度下光电流与光子能量的函数关系，从1.36到1.55 eV。通过对每种温度的光谱分析，我们发现了三个对应于带间跃迁的峰，并绘制了与峰对应的能量随温度变化的曲线。

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来源
《Microelectronics journal》 |2006年第2期|p.91-93|共3页
作者
G.E. Zardas; P.H. Yannakopoulos; M. Ziska; Chr. Symeonides; M. Vesely; P.C. Euthymiou;
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作者单位

Department of Physics, Solid State Section, University of Athens, GR-I5784 Zografos, Greece;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
A. Semiconductors; D. Photoconductivity; D. Recombination and Trapping; E. Photoelectron spectroscopy;

机译：A.半导体;D。光电导;D.重组和诱捕;E.光电子能谱;

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专利

1. A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation [J] . G.E. Zardas, P.H. Yannakopoulos, Chrys I. Symeonides, Microelectronics journal . 2008,第5期

机译：SI-GaAs的能隙中电子跃迁的光电导光谱和α-粒子辐照研究
2. Temperature dependence of the spectral weight in p- and n-type cuprates: A study of normal state partial gaps and electronic kinetic energy [J] . Bontemps N, Lobo RPSM, Santander-Syro AF, Annals of Physics . 2006,第7期

机译：p型和n型铜酸盐中光谱权重的温度依赖性：正常状态部分间隙和电子动能的研究
3. Temperature and field dependence of MgB2 energy gaps from tunneling spectra [J] . Badr MH., Ng KW. Physica, C. Superconductivity and its applications . 2003,第0期

机译：隧道光谱对MgB2能隙的温度和场依赖性
4. Terahertz generation from SI-GaAs photoconductive dipole antenna with different electrode gaps [C] . Wei SHI, Zhen-zhen ZHANG, Lei HOU, International symposium on photoelectronic detection and imaging;ISPDI 2009 . 2009

机译：具有不同电极间隙的SI-GaAs光电导偶极天线产生太赫兹
5. Photoemission studies of high critical transition temperature superconductors: Doping dependences, Fermi surfaces, superconducting gaps, and metal-superconductor interfaces. [D] . Dessau, Daniel Stephen. 1993

机译：高临界转变温度超导体的光发射研究：掺杂依赖性，费米表面，超导间隙和金属-超导体界面。
6. Temperature dependence of the superconducting energy gaps in Ca9.35La0.65(Pt3As8)(Fe2As2)5 single crystal [O] . Yu-il Seo, Woo-jae Choi, D. Ahmad, -1

机译：Ca9.35La0.65（Pt3As8）（Fe2As2）5单晶中超导能隙的温度依赖性
7. Temperature dependence of the spectral weight in p- and n-type cuprates: a study of normal state partial gaps and electronic kinetic energy [O] . Bontemps, N., Lobo, R. P. S. M., Santander-Syro, A. F., 2006

机译：p型和n型铜酸盐中光谱重量的温度依赖性：正常状态部分间隙和电子动能的研究
8. Temperature Dependence of Absorption Spectra of P-Type GaP [R] . Mounir, M., Balloomal, L. S. 1985

机译：p型Gap吸收光谱的温度依赖性

Temperature dependence of Si-GaAs energy gap using photoconductivity spectra

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