• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Microelectronics journal >A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation
【24h】

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation

机译：SI-GaAs的能隙中电子跃迁的光电导光谱和α-粒子辐照研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The aim of the present work is to study the density of electron transitions inside the energy gap of SI-GaAs at various temperatures and under α-particle irradiation at 300 K. The photocurrent as a function of photon energy from 1.35 to 1.80 eV, for each temperature, was measured in the temperature range from 180 to 300 K. From the spectra analysis for each temperature, three peaks were found. The energy that corresponds to the peaks as a function of temperature was plotted. The temperature and the irradiation strongly affect the value of the peaks, which is related to the number of transitions of the electrons inside the energy gap. As the temperature decreases, the peaks follow the same change. After irradiation, the values of the peaks decrease for all temperatures and this decrease is more intense for the P3 peak.
机译：本工作的目的是研究SI-GaAs在300 K的各种温度和α粒子辐照下，能隙内部电子跃迁的密度。光电流与光子能量的函数关系为1.35至1.80 eV，对于在180至300 K的温度范围内测量每个温度。通过对每个温度的光谱分析，发现了三个峰。绘制了对应于峰值随温度变化的能量。温度和辐照强烈影响峰的值，这与能隙内电子的跃迁数有关。随着温度降低，峰值也遵循相同的变化。辐照后，所有温度下的峰值均降低，而P3峰的降幅更大。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号