Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon

Cuiping Jia; Wei Dong; Caixia Liu; Xindong Zhang; Jingran Zhou; Zhicheng Zhong; Hailin Xue; Huidong Zang; Baokun Xu; Weiyou Chen

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Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon

机译：在（110）硅上使用和不使用IPA解决方案的情况下，在KOH中的凸角底切和菱形补偿

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The present investigation introduces convex corners undercutting and results of rhombus compensation patterns in 40% aqueous KOH solution and in KOH saturated with isopropanol (IPA) solution. All experiments are carried out on (110) silicon at 70℃. Undercuts take place on convex corners in both solutions. Moreover, the front etch planes governing undercut vary with solutions. Rhombus compensations are used to correct the undercut. Perfect acute corner without residue is obtained, and there are only some residue structures on both sides of obtuse convex corners in KOH with IPA solution, which are better results than those in pure aqueous KOH solution.

机译：本研究介绍了40％KOH水溶液和异丙醇（IPA）饱和KOH中的凸角底切和菱形补偿模式的结果。所有实验均在70℃的（110）硅上进行。在两种解决方案中，凸凹都发生在底角上。此外，控制底切的前蚀刻平面随解决方案而变化。菱形补偿用于纠正底切。获得了完美的无残留锐角，并且在IPA溶液中KOH的钝角凸角的两侧都只有一些残留结构，比纯KOH水溶液的结果更好。

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来源
《Microelectronics journal》 |2006年第11期|p.1297-1301|共5页
作者
Cuiping Jia; Wei Dong; Caixia Liu; Xindong Zhang; Jingran Zhou; Zhicheng Zhong; Hailin Xue; Huidong Zang; Baokun Xu; Weiyou Chen;
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作者单位

College of Electronic sciences & Engineering, State Key Laboratory on Integrate Optoelectronics, Jilin University, Changchun 130012, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
KOH solution; convex corner; (110) silicon; rhombus compensation;

机译：KOH解决方案;凸角;（110）硅;菱形补偿;

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专利

1. Mechanism for convex corner undercutting of (110) silicon in KOH [J] . Wei Dong, Xindong Zhang, Caixia Liu, Microelectronics journal . 2004,第5期

机译：KOH中（110）硅凸角底切的机理
2. EFFECTS OF [110]-ORIENTED CORNER COMPENSATION STRUCTURES ON MEMBRANE QUALITY AND CONVEX CORNER INTEGRITY IN (100)-SILICON USING AQUEOUS KOH [J] . Vankampen RP., Wolffenbuttel RF. Journal of Micromechanics and Microengineering . 1995,第2期

机译：[110]取向的角补偿结构对KOH水溶液对（100）硅中膜质量和凸角完整性的影响
3. EFFECTS OF [110]-ORIENTED CORNER COMPENSATION STRUCTURES ON MEMBRANE QUALITY AND CONVEX CORNER INTEGRITY IN (100)-SILICON USING AQUEOUS KOH [J] . Vankampen RP., Wolffenbuttel RF. Journal of Micromechanics and Microengineering . 1995,第2期

机译：[110]取向的角补偿结构对KOH水溶液对（100）硅中膜质量和凸角完整性的影响
4. Compensation of convex corners in sensors with bossed structure etched in tmah and TMAH + IPA solutions [C] . Irena Barycka, Jan Dziuban, Malgorzata, Conference on optoelectronic and electronic sensors . 2001

机译：在TMAH和TMAH + IPA解决方案中蚀刻传感器中凸角的凸角
5. A simple and robust model to explain convex corner undercutting in wet bulk micromachining [O] . Prem Pal, Sajal Sagar Singh 2013

机译：一个简单而健壮的模型来解释湿法微加工中凸角底切
6. Corner Compensation Structures for (110) Oriented Silicon [R] . Ciarlo, D. R. 1987

机译：（110）取向硅的角补偿结构

Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon

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