首页>
外国专利>
NEGATIVE PHOTORESIST FOR SILICON KOH ETCH WITHOUT SILICON NITRIDE
NEGATIVE PHOTORESIST FOR SILICON KOH ETCH WITHOUT SILICON NITRIDE
展开▼
机译:不含氮化硅的KOH蚀刻片的负光致抗蚀剂
展开▼
页面导航
摘要
著录项
相似文献
摘要
New photoresist are provided for use during the manufacture of semiconductor and MEMS devices. The primer layer comprises a silane which is dissolved or dispersed in the solvent system is preferably used. The photo-resist layer comprises a copolymer prepared from a nitrile, and an epoxy-containing monomer to styrene, acrylic. The photoresist layer contains a photo-acid generating agent, preferably a negative-acting the (negative-acting).
展开▼