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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma
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Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma

机译：高频变化对双频叠加电容耦合等离子体中ArF光刻胶和氮化硅层刻蚀特性的影响

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摘要

In this work, the deformation of ArF photoresist (PR) and etch characteristics of the ArF PR and Si_3N_4 layers were investigated in the dual frequency superimposed capacitively coupled plasmas under different frequency combinations by varying the process parameters such as dc self-bias voltage (V_(dc)), CF_4/CHF_3 flow ratio, and O_2 flow rate in the CF_4/CHF_3/O_2/Ar chemistry. Surface roughness measurements and morphological investigation of the line and space patterns after etching by atomic force microscopy and scanning electron microscopy, respectively, showed increased surface roughness and deformation with increasing the V_(dc), the high-frequency source frequency (f_(HF)), the CHF_3 flow percentage, and the O_2 flow rate. The etch rates of the ArF PR and silicon nitride layers were also increased significantly with the V_(dc) and f_(HF) increased. The Si_3N_4/PR etch selectivity was increased most significantly by an increase in the CHF_3 flow percentage.
机译：在这项工作中，通过改变工艺参数（例如直流自偏压（V_）， （dc）），CF_4 / CHF_3 / O_2 / Ar化学成分中的CF_4 / CHF_3流量比和O_2流速。分别通过原子力显微镜和扫描电子显微镜对蚀刻后的线和空间图案进行表面粗糙度测量和形态研究，结果表明，随着V_（dc），高频源频率（f_（HF） ），CHF_3流量百分比和O_2流量。随着V_（dc）和f_（HF）的增加，ArF PR和氮化硅层的蚀刻速率也显着增加。通过增加CHF_3流量百分比，可以最大程度地提高Si_3N_4 / PR蚀刻选择性。

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