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Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications

机译：用于存储单元应用的亚微米MOSFET中的静态和低频噪声表征

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In this paper, we present the extraction of oxide traps properties of n-metal-oxide-semiconductor (N-MOS) field effect transistors with W x L = 0.5 x 0.1 μm~2 using low-frequency (LF and random telegraph signal) noise and static Ⅰ(Ⅴ) characterizations. The impact of oxide thickness, on static and noise parameters is analyzed. Static measurements on N-MOS devices with different tunnel oxide thickness show anomalies (a significant increase in V_t values for low temperature and kink effect) attributed to traps located in the oxide. From LF noise analysis we find that 1/f noise stems from carrier number fluctuations. The slow oxide trap concentration deduced from the noise data is about 10~(15) eV/cm~3 in agreement with the state-of-the-art gate oxides. Finally, drain current RTS amplitude as large as 10% have been observed.
机译：本文介绍了利用低频（LF和随机电报信号）提取W x L = 0.5 x 0.1μm〜2的n-MOS场效应晶体管的氧化物陷阱特性的方法噪声和静态Ⅰ（Ⅴ）表征。分析了氧化物厚度对静态和噪声参数的影响。在具有不同隧道氧化物厚度的N-MOS器件上的静态测量显示，异常现象（由于低温和扭结效应，V_t值显着增加）归因于位于氧化物中的陷阱。通过低频噪声分析，我们发现1 / f噪声源于载波数的波动。由噪声数据推算出的缓慢的氧化物陷阱浓度约为10〜（15）eV / cm〜3，与最新的栅极氧化物相符。最后，已观察到漏极电流RTS幅度高达10％。

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