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Performance-reliability trade-offs in short range RF power amplifier design

机译:短距离射频功率放大器设计中的性能可靠性折衷

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摘要

In this work, trade-offs between performance and reliability in CMOS RF power amplifiers at the design stage are studied. The impact of transistor sizing, amplifier class and on-chip matching network design are explored for a 130 nm technology and the implications of design decisions in transistor gate oxide reliability are discussed and projected. A strong trade-off is observed between efficiency and reliability, mainly for different on-chip output matching architectures. A comparison between two example designs is performed via SPICE simulations that include reliability models and the effects of aging on the stress conditions of each amplifier.
机译:在这项工作中,研究了设计阶段CMOS RF功率放大器的性能和可靠性之间的权衡。探索了晶体管尺寸,放大器类别和片上匹配网络设计对130 fornm技术的影响,并讨论并预测了设计决策对晶体管栅极氧化物可靠性的影响。在效率和可靠性之间观察到一个很大的折衷,主要是针对不同的片上输出匹配架构。通过SPICE仿真进行了两个示例设计之间的比较,这些仿真包括可靠性模型以及老化对每个放大器的应力条件的影响。

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