Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

V.A.Gritsenko; Yu.G.Shavalgin; P.A.Pundur

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Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

机译：非晶态氮氧化硅的阴极发光和光致发光

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摘要

The cathodoluminescence and photoluminescence of amorphous silicon oxynitride (a-SiO_xN_y) films with differnt compositions were measured for the first time in the near infrared to visible-ultraviolet range.The red band with energy at 1.8-1.9 eV, ultravilet bands with energies 3.1,3.4-3.6,4.4-4.7, and 5.4 eV were observed in a-SiO_xN_y. The 1.8-1.9 eV band is attributed to th eoxygen adn nitrogen atoms with unpaired electrons and the 2.7 eV band is attributed to twofold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supoposed to be due to the Si-Si bonds.

机译：首次在近红外到可见紫外范围内测量了组成不同的非晶态氮氧化硅（a-SiO_xN_y）膜的阴极发光和光致发光。红色带的能量为1.8-1.9 eV，紫外带的能量为3.1，在a-SiO_xN_y中观察到3.4-3.6、4.4-4.7和5.4eV。 1.8-1.9 eV谱带归因于具有不成对电子的氧和氮原子，而2.7 eV谱带归因于具有两个电子的双配位硅原子。 5.4 eV的肩峰是由于过氧自由基引起的，而其他紫外线带被认为是由于Si-Si键引起的。

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《Microelectronics & Reliability》 |1999年第5期|715-718|共4页
作者
V.A.Gritsenko; Yu.G.Shavalgin; P.A.Pundur;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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1. Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm [J] . Zhang Pengzhan, Chen Kunji, Dong Hengping, Applied Physics Letters . 2014,第1期

机译：在470 nm波长下，非晶态氮氧化硅薄膜的光致发光的内部量子效率高于60％
2. Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm [J] . Pengzhan Zhang, Kunji Chen, Hengping Dong, Applied Physics Letters . 2014,第1期

机译：在470 nm波长下，非晶态氮氧化硅薄膜的光致发光的内部量子效率高于60％
3. Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride [J] . Kato H., Noma T., Seol KS., Journal of Physics. Condensed Matter . 2001,第30期

机译：氢化非晶态氮氧化硅中的热诱导光致发光猝灭中心
4. Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride [C] . V. A. Gritsenko, Yu. G. Shavalgin, P. A. Pundur, International Conferecne on Microelectronics . 2000

机译：无定形硅氧氮化物中陷阱中心的阴极致发光和光致发光研究
5. Photoluminescence excitation spectroscopy of hydrogenated amorphous silicon using a free electron laser. [D] . Mensing, Glennys Ann. 1999

机译：使用自由电子激光的氢化非晶硅的光致发光激发光谱。
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8. Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide [R] . DeForest, D. L. 1982

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Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

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