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Failure of the negative voltage regulator in medium-photon-energy X radiation fields

机译：负电压调节器在中光子能量X辐射场中的故障

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摘要

Negative voltage regulators were examined in the effective 60-keV and 170-keV bremsstrahlung fields, as well as in the field of ~(60)Co gamma-radiation. Most devices irradiated in the fields of medium-dose-rate breaking radiation failed to operate after absorption of very small total doses of ionizing radiation, in the range of 37-132 Gy(SiO_2). However, all samples irradiated in the gamma radiation environment remained completely functional, even after deposition of a total dose of 500 Gy(SiO_2). Devices irradiated with higher input voltages failed after absorption of low total doses, whereas the load current increase mitigated and even prevented circuit failures in X radiation fields. The high radiation sensitivity of the LM2990T-5 voltage regulators operating in the bremsstrahlung fields was a consequence of the dose enhancement on the gold-aluminum connection between the silicon chip and ground contact. Computer model simulations indicated that the primary failure mechanisms were the generation of radiation-induced leakage currents alongside the npn transistors in the operational amplifier circuit. The difference between the voltage regulator responses in various bremsstrahlung environments was affected by the time-dependent effects, leading to the partial recovery of radiation-induced trapped charge.
机译：在有效的60keV和170keV的stra致辐射场以及〜（60）Coγ辐射场中检查了负电压调节器。在吸收中等剂量率的破裂辐射领域中的大多数设备后，它们吸收的总剂量非常小，在37-132 Gy（SiO_2）范围内，无法工作。但是，即使沉积了500 Gy（SiO_2）的总剂量，在γ辐射环境下辐照的所有样品仍保持完全的功能。在吸收低总剂量后，用较高的输入电压辐照的设备会发生故障，而负载电流的增加会得到缓解，甚至可以防止X辐射场中的电路故障。在致辐射场中工作的LM2990T-5稳压器的高辐射灵敏度是硅芯片和接地触点之间金铝连接剂量增加的结果。计算机模型仿真表明，主要的故障机制是在运算放大器电路中的npn晶体管旁边产生辐射引起的泄漏电流。各种致辐射环境中的电压调节器响应之间的差异受时间依赖性影响的影响，从而导致辐射诱导的捕获电荷的部分恢复。

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  • 来源
    《Microelectronics & Reliability》 |2014年第1期|79-89|共11页
  • 作者

    Vladimir Dj. Vukic; Predrag V. Osmokrovic;

  • 作者单位

    Institute of Electrical Engineering 'Nikola Tesla', University of Belgrade, Koste Glavinica 8A, p. fah 139, 11000 Beograd, Serbia;

    Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, p. fah 35 - 54, 11000 Beograd, Serbia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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