Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Maria Gloria Cano de Andrade; Joao Antonio Martino; Marc Aoulaiche; Nadine Collaert; Eddy Simoen; Cor Claeys

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Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

机译：60 MeV质子辐照下的体和DTMOS三栅极器件的研究

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In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced Barrier Lowering (DIBL) and the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be compared. Furthermore, the Low-Frequency (LF) noise will be also analyzed in the DT mode and the standard biasing configuration. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment.

机译：在本文中，在具有和不具有动态阈值MOS配置（DTMOS）的三栅极大容量FinFET中，通过实验研究了质子辐照的影响。将比较漏极电流，跨导，漏极感应势垒降低（DIBL）以及模拟性能的重要品质因数，例如跨导过漏电流，输出电导和固有电压增益。此外，还将在DT模式和标准偏置配置下分析低频（LF）噪声。结果表明，DTMOS FinFET的更好的电气特性和模拟性能使其成为辐射环境中低噪声RF模拟应用的极有竞争力的候选者。

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来源
《Microelectronics & Reliability》 |2014年第11期|2349-2354|共6页
作者
Maria Gloria Cano de Andrade; Joao Antonio Martino; Marc Aoulaiche; Nadine Collaert; Eddy Simoen; Cor Claeys;
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作者单位

Campus de Sorocaba, UNESP - Univ Estadual Paulista, Automation and Integrated Systems, Gasi, Av. Tres de Marco, n. 511, 18087-180 Sorocaba, Brazil ,LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, n.158, 05508-010 Sao Paulo, Brazil ,Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, n.158, 05508-010 Sao Paulo, Brazil;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium ,E.E. Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
DTMOS FinFETs; Proton irradiation; Analog performance; Low-frequency noise; Flicker noise; Generation-recombination noise;

机译：DTMOS FinFET;质子辐照;模拟性能;低频噪声;闪烁噪声;产生重组噪声;

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专利

1. Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons [J] . 李兴冀, 耿洪滨, 兰慕杰, 中国物理：英文版 . 2010,第005期

机译：8 MeV质子，60 MeV Br离子和1 MeV电子对MOS和双极器件的辐射效应
2. Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons [J] . Li Xing-Ji, Geng Hong-Bin, Lan Mu-Jie, 中国物理：英文版 . 2010,第005期
3. Investigation of type inversion of n-bulk in 10MeV proton-irradiated FZ silicon detectors using a scanning electron microscope [J] . Kari Leinonen, Tanja Palviainen, Tuure Tuuva, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2005,第3期

机译：用扫描电子显微镜研究10MeV质子辐照的FZ硅探测器中n本体的类型反转
4. Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton [C] . de Andrade Maria Gloria Cano, Martino Joao Antonio, Aoulaiche Marc, Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on . 2012

机译：60 MeV质子辐照下Bulk和DTMOS三栅极器件的低频噪声行为
5. Thorium and uranium M-shell x-ray production cross sections for 0.4–4.0 MeV protons, 0.4–6.0 MeV helium ions, 4.5–11.3 mev carbon ions, and 4.5–13.5 MeV oxygen ions [D] . Phinney, Lucas C. 2011

机译：0.4和铀M壳X射线产生的横截面，用于0.4–4.0 MeV质子，0.4–6.0 MeV氦离子，4.5–11.3 mev碳离子和4.5–13.5 MeV氧离子
6. Characteristics of Protons Exiting from a Polyethylene Converter Irradiated by Neutrons with Energies between 1 keV and 10 MeV [O] . D. Nikezic, Mehrdad Shahmohammadi Beni, D. Krstic, -1

机译：能量为1 keV至10 MeV的中子辐照从聚乙烯转化器出来的质子的特性
7. Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI [O] . M. G. C. Andradea, J. A. Martinoa, E. Simoenb, 2016

机译：三栅极器件在室温和低温下的模拟性能：Bulk，DTmOs，BOI和sOI

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

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