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首页> 外文期刊>Microelectronics reliability >New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime
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New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime

机译：新优化的双材料（DM）栅极设计可提高亚阈值状态下的亚微米GaN-MESFET的可靠性

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摘要

In this paper, new Dual-Material-gate (DM) concept and optimization approach are proposed to improve the device immunity against the hot carrier and short channel effects (SCEs), and optimize the subthreshold electrical performance of the submicron Gallium Nitride (GaN)-MESFET. The 2D analytical analysis includes the modeling of the channel potential, subthreshold swing, threshold voltage, Drain-Induced Lowering Barrier (DIBL) and parasitic resistances. The influence of gate length and the work function of each gate region on subthreshold behavior was investigated using the developed analytical models. The developed analytical approaches are verified and validated by the good agreement found with the 2D numerical simulations for wide range of device parameters and bias conditions. The presented compact models are used to formulate the different objective functions, which are the pre-requisite of multi-objective genetic algorithms optimization, which will be used to optimize the device subthreshold performances. The optimized design can alleviate the critical problem and further improve the immunity of SCEs of submicron GaN-MESFET-based digital circuits for low power and high speed applications.
机译：本文提出了新的双材料栅（DM）概念和优化方法，以提高器件对热载流子和短沟道效应（SCE）的抵抗力，并优化亚微米氮化镓（GaN）的亚阈值电性能。 -MESFET。二维分析包括通道电势，亚阈值摆幅，阈值电压，漏极感应下降势垒（DIBL）和寄生电阻的建模。使用开发的分析模型研究了栅极长度和每个栅极区域的功函数对亚阈值行为的影响。通过广泛的器件参数和偏置条件的2D数值模拟发现的良好协议，对开发的分析方法进行了验证和验证。提出的紧凑模型被用来制定不同的目标函数，这是多目标遗传算法优化的前提，它将被用于优化设备的亚阈值性能。优化的设计可以缓解关键问题，并进一步提高针对低功率和高速应用的基于亚微米GaN-MESFET的数字电路的SCE的抗扰性。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.958-963|共6页
  • 作者

    N. Lakhdar; F. Djeffal;

  • 作者单位

    LEA, Department of Electronics, University of Batna, Batna 05000, Algeria;

    LEA, Department of Electronics, University of Batna, Batna 05000, Algeria,LEPCM, University of Batna, Batna 05000, Algeria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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