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首页> 外文期刊>Microelectronics & Reliability >Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies
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Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies

机译：温度对高频下聚苯胺/ p-Si / Al MIS器件的电容频率和电导电压特性的影响

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摘要

A polyaniline/p-Si/Al MIS device has been fabricated by forming a polyaniline layer on Si by using the electrochemical polymerization method. The conductance-voltage and capacitance-frequency measurements have been performed as a function of temperature. The capacitance of the device decreased with increasing frequency. The increase in capacitance results from the presence of interface states. The peaks have been observed in the conductance curves of the device and attributed to the presence of an inter-facial layer between polyaniline and p-Si. For each temperature, the plot of series resistance/voltage gave a peak. The voltage and temperature dependence of series resistance has been attributed to the particular distribution density of interface states and the interfacial insulator layer.
机译：通过使用电化学聚合方法在Si上形成聚苯胺层，已经制造了聚苯胺/ p-Si / Al MIS器件。电导电压和电容频率的测量已随温度而变。器件的电容随着频率的增加而减小。电容的增加归因于界面状态的存在。在器件的电导曲线中已经观察到峰，并且归因于聚苯胺和p-Si之间存在界面层。对于每个温度，串联电阻/电压图都给出了一个峰值。串联电阻对电压和温度的依赖性已归因于界面态和界面绝缘层的特定分布密度。

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  • 来源
    《Microelectronics & Reliability》 |2012年第7期|p.1362-1366|共5页
  • 作者

    S.Aydogan; M. Saglam; A. Tueruet;

  • 作者单位

    Department of Physics, Faculty of Sciences, University ofAtatuerk, 25240 Erzurum, Turkey;

    Department of Physics, Faculty of Sciences, University ofAtatuerk, 25240 Erzurum, Turkey;

    Medeniyet University, Science Faculty, Physics Engineering department, Goztepe Istanbul, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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