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Modeling of terminal ring structures for high-voltage power MOSFETs

机译：高压功率MOSFET的端子环结构建模

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摘要

To achieve a high blocking voltage, a power MOSFET is often guarded with multiple floating field limiting rings (MFFLRs) to re-distribute the electric field for extending the breakdown voltage. However, this high-voltage protecting structure occupies a significant silicon area of the power MOSFET. The breakdown field of a floating ring depends on the junction curvature, sizes of the rings and the spacing between the rings. A good design can reduce the total silicon area of the MOSFET transistor by optimizing the floating ring design through modeling. The conventional approach was based on the classical breakdown field model originally developed for the low-voltage p-n junction which has limited precision in the medium to high electric field range. In this work, a precise fitting model for the MFFLR structure with high junction breakdown voltage is proposed. Measurement results of the breakdown voltage of the MOSFETs for the MFFLR structure are presented.
机译：为了获得高阻断电压，功率MOSFET通常采用多个浮动场限制环（MFFLR）保护，以重新分布电场以扩展击穿电压。然而，这种高压保护结构占据了功率MOSFET的很大的硅面积。浮动环的击穿场取决于结的曲率，环的尺寸以及环之间的间距。好的设计可以通过建模优化浮环设计，从而减少MOSFET晶体管的总硅面积。传统方法基于最初为低压p-n结开发的经典击穿场模型，该模型在中高电场范围内的精度有限。在这项工作中，提出了具有高结击穿电压的MFFLR结构的精确拟合模型。给出了用于MFFLR结构的MOSFET击穿电压的测量结果。

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  • 来源
    《Microelectronics & Reliability》 |2012年第8期|p.1645-1650|共6页
  • 作者

    Wing-Shan Tam; Sik-Lam Siu; Oi-Ying Wong; Chi-Wah Kok; Hei Wong; V. Filip;

  • 作者单位

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong,Canaan Semiconductor Limited, Hong Kong Science Park, Shatin, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Canaan Semiconductor Limited, Hong Kong Science Park, Shatin, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong,University of Bucharest, Faculty of Physics, 405 Atomistilor Str., Bucharest-Magurele 077125, P.O. Box MC-11, Romania;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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