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首页> 外文期刊>Molecular Crystals and Liquid Crystals >Selenization of Cu-In-Ga Metal Precursor Using DESe(Diethyl Selenide)
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Selenization of Cu-In-Ga Metal Precursor Using DESe(Diethyl Selenide)

机译：使用硒化二硒（SeSe）硒化铜铟镓金属前体

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摘要

In this study, Cu(In,Ga)Se2 thin films were prepared using a Cu-In-Ga metallic precursor and diethylselenide (DESe) vapor. The Cu/(In+Ga) ratio of the precursor was adjusted by modulating the power impressed on the CuGa target. The Cu/(In+Ga) ratio was varied from 0.45 to 1.02, and the prepared precursors were selenized in a 500°C quartz furnace using DESe. The results showed that the preferred crystal phase and the uniformity of the thin film differed according to the composition of the precursor. After selenization, changes in grain size stemming from Cu composition were observed, and the occurrence of a binary phase was verified through KCN etching. Shifts in the Cu11(InGa)9 peak and the separation of CIS and CGS peaks relative to increased Ga content were also observed.
机译：在这项研究中，使用Cu-In-Ga金属前驱体和二乙基硒化（DESe）蒸气制备了Cu（In，Ga）Se 2 薄膜。通过调节施加在CuGa靶上的功率来调节前体的Cu /（In + Ga）比。 Cu /（In + Ga）比从0.45到1.02不等，使用DESe在500°C石英炉中将制得的前体硒化。结果表明，优选的晶相和薄膜的均匀性根据前体的组成而不同。硒化后，观察到由Cu组成引起的晶粒尺寸变化，并且通过KCN蚀刻证实了二元相的出现。还观察到Cu 11 （InGa） 9 峰的移动以及相对于Ga含量增加的CIS和CGS峰的分离。

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