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首页> 外文期刊>Molecular Crystals and Liquid Crystals >Fabrication of Atomic Layer Deposited Zinc Oxide Thin Film Transistors with Organic Gate Insulator on Flexible Substrate
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Fabrication of Atomic Layer Deposited Zinc Oxide Thin Film Transistors with Organic Gate Insulator on Flexible Substrate

机译：在柔性基板上用有机栅极绝缘体制备原子层沉积的氧化锌薄膜晶体管

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摘要

In the fabrication of transparent conductive oxide thin film transistor (TFT), an atomic layer deposited (ALD) zinc oxide (ZnO) and a cross-linked poly-vinyl-alcohol (c-PVA) were each used as active layer and gate insulating layer on poly-ethylene (PET) substrate respectively. Considering the transmittance and the deposition rate of the ALD ZnO at a low temperature without any damage on PET substrate, the ZnO layer was deposited at a temperature of 120°C on a spin-coated c-PVA layer. From the atomic force microscope (AFM) images, it was possible to conclude that the surface morphologies of ZnO deposited on a c-PVA layer was not inferior to those of ZnO deposited on bare-Si and that the c-PVA can be used as a gate insulator at 120°C. The fabricated ZnO TFT showed good electrical characteristics such as the mobility of 0.1 cm2/V · s, on-off current ratio of 4.5 × 104.
机译：在透明导电氧化物薄膜晶体管（TFT）的制造中，原子层沉积（ALD）氧化锌（ZnO）和交联的聚乙烯醇（c-PVA）分别用作有源层和栅极绝缘层分别在聚乙烯（PET）基底上形成层。考虑到低温下ALD ZnO的透射率和沉积速率，而没有在PET基板上造成任何损坏，ZnO层在120°C的温度下沉积在旋涂c-PVA层上。根据原子力显微镜（AFM）图像，可以得出结论，沉积在c-PVA层上的ZnO的表面形态不劣于沉积在裸露的Si上的ZnO的表面形态，并且c-PVA可以用作120°C下的栅极绝缘体。制成的ZnO TFT表现出良好的电特性，例如迁移率0.1 cm 2 / V·s，开/关电流比为4.5×10 4 。

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