• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nature >Interface dynamics and crystal phase switching in GaAs nanowires
【24h】

Interface dynamics and crystal phase switching in GaAs nanowires

机译：GaAs纳米线的界面动力学和晶相切换

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.
机译：控制非平衡晶体结构的形成是晶体生长中最重要的挑战之一。催化生长的纳米线是研究相选择的基本物理原理的理想系统，并且可以基于晶相的工程技术开发新的电子应用。在这里，我们对砷化镓（GaAs）纳米线的生长过程进行了成像，因为它们由于变化的生长条件而在各相之间切换。我们发现各相的生长动力学之间存在明显的差异，包括界面形态，步流和催化剂几何形状的差异。我们使用一个模型来解释这些差异以及相的选择，该模型将催化剂的体积，三结点的接触角（固体，液体和蒸气相遇的点）以及GaAs每一新层的成核位置联系起来。该模型使我们能够预测应观察到每个相的条件，并使用这些预测来设计GaAs异质结构。这些结果可能适用于其他纳米线系统的相选择。

著录项

  • 来源
    《Nature》 |2016年第7594期|317-322|共6页
  • 作者

    Jacobsson Daniel; Panciera Federico; Tersoff Jerry; Reuter Mark C.; Lehmann Sebastian; Hofmann Stephan; Dick Kimberly A.; Ross Frances M.;

  • 作者单位

    Lund Univ, Solid State Phys & NanoLund, Box 118, S-22100 Lund, Sweden|Lund Univ, Ctr Anal & Synth, Box 124, S-22100 Lund, Sweden;

    Univ Cambridge, Dept Engn, 9 JJ Thomson Ave, Cambridge CB3 0FA, England|IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA;

    IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA;

    IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA;

    Lund Univ, Solid State Phys & NanoLund, Box 118, S-22100 Lund, Sweden;

    Univ Cambridge, Dept Engn, 9 JJ Thomson Ave, Cambridge CB3 0FA, England;

    Lund Univ, Solid State Phys & NanoLund, Box 118, S-22100 Lund, Sweden|Lund Univ, Ctr Anal & Synth, Box 124, S-22100 Lund, Sweden;

    IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号