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A circuit mechanism for differentiating positive and negative associations

机译:区分正关联和负关联的电路机制

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摘要

The ability to differentiate stimuli predicting positive or negative outcomes is critical for survival, and perturbations of emotional processing underlie many psychiatric disease states. Synaptic plasticity in the basolateral amygdala complex (BLA) mediates the acquisition of associative memories, both positive(1'2) and negative'. Different populations of BLA neurons may encode fearful or rewarding associations'', but the identifying features of these populations and the synaptic mechanisms of differentiating positive and negative emotional valence have remained unknown. Here we show that BLA neurons projecting to the nucleus accumbens (NAc projectors) or the centromedial amygdala (CeM projectors) undergo opposing synaptic changes following fear or reward conditioning. We find that photostimulation of NAc projectors supports positive reinforcement while photostimulation of CeM projectors mediates negative reinforcement. Photoinhibition of CeM projectors impairs fear conditioning and enhances reward conditioning. We characterize these functionally distinct neuronal populations by comparing their electrophysiological, morphological and genetic features. Overall, we provide a mechanistic explanation for the representation of positive and negative associations within the amygdala.
机译:区分预测阳性或阴性结果的刺激的能力对于生存至关重要,而情绪加工的扰动是许多精神病状态的基础。基底外侧杏仁核复合体(BLA)中的突触可塑性介导了联想记忆的获得,包括正(1'2)和负'。 BLA神经元的不同种群可能编码恐惧或有益的联系'',但这些种群的识别特征以及区分正负情绪价的突触机制仍然未知。在这里,我们显示出投射到伏隔核(NAc投影仪)或中央杏仁核(CeM投影仪)上的BLA神经元在恐惧或奖赏调节后经历相反的突触变化。我们发现,NAc投影仪的光刺激支持正增强,而CeM投影仪的光刺激可调节负增强。 CeM投影仪的光抑制作用会削弱恐惧感,并增强奖励条件。我们通过比较它们的电生理,形态和遗传特征来表征这些功能不同的神经元人口。总体而言,我们为杏仁核内正向和负向关联的表示提供了一种机械的解释。

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  • 来源
    《Nature》 |2015年第7549期|675-678|共4页
  • 作者单位

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA|MIT, Neurosci Grad Program, Cambridge, MA 02139 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA;

    Harvard Univ, Sch Med, Dept Genet, Boston, MA 02115 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA|Wellesley Coll, Undergrad Program Neurosci, Wellesley, MA 02481 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA|MIT, Undergrad Program Neurosci, Cambridge, MA 02139 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA|Univ Amsterdam, Masters Program Biomed Sci, NL-1098 XH Amsterdam, Netherlands;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA|MIT, Undergrad Program Neurosci, Cambridge, MA 02139 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA|MIT, Neurosci Grad Program, Cambridge, MA 02139 USA;

    MIT, McGovern Inst Brain Res, Cambridge, MA 02139 USA;

    Harvard Univ, Sch Med, Dept Genet, Boston, MA 02115 USA;

    MIT, Dept Brain & Cognit Sci, Picower Inst Learning & Memory, Cambridge, MA 02139 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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