Fast multishell alloy transistors

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Fast multishell alloy transistors

机译：快速多壳合金晶体管

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In the continuing drive to improve and miniaturize transistors, the microelectronics industry has adopted three-dimensional electronic gate structures. Another way to improve transistors is to use semiconductor materials that have higher electron mobility than silicon, although this presents significant fabrication challenges. Katsuhiro Tomioka et al. combine these approaches; they grow with high precision vertical, six-sided core-multishell indium-gallium-arsenide nanowires with an all-surrounding gate on a silicon substrate.

机译：在不断改进和小型化晶体管的过程中，微电子工业采用了三维电子门结构。改善晶体管的另一种方法是使用电子迁移率比硅高的半导体材料，尽管这带来了巨大的制造挑战。胜冈胜宏等。结合这些方法；它们通过在硅基板上具有全环绕栅极的高精度垂直六面核多壳铟镓砷砷纳米线生长。

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《Nature》 |2012年第7409期|p.33|共1页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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1. Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP [J] . Houssam Chouaib, Catherine Bru-Chevallier, Aleksandra Apostoluk, Physica status solidi . 2009,第5期

机译：光反射光谱法用于鉴定InP上超快异质结双极晶体管中引入的GaAsSb合金
2. Accurate construction of a hierarchical nickel-cobalt oxide multishell yolk-shell structure with large and ultrafast lithium storage capability [J] . Leng Jin, Wang Zhixing, Li Xinhai, Journal of Materials Chemistry, A. Materials for energy and sustainability . 2017,第29期

机译：精确构建具有大型和超快锂储存能力的等级镍钴氧化物Multish-Shell结构
3. Periods and Damping Rates of Fast Sausage Oscillations in Multishelled Coronal Loops [J] . Chen Shao-Xia, Li Bo, Xia Li-Dong, Solar physics . 2015,第8期

机译：多壳冠状环中快速香肠振荡的周期和阻尼率
4. Selective-area growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si and tunneling transistor application [C] . Katsuhiro Tomioka, Fumiya Ishizaka, Junichi Motohisa, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：InGaAs / InP / InAlAs / InP核-多壳纳米线在Si和隧穿晶体管上的选择性区域生长
5. Enhancement of the Dynamic Performance of Electrolyte-Gated Transistors: Toward Fast-Switching, Low-Operating Voltage Printed Electronics [D] . Zare Bidoky, Fazel. 2019

机译：增强电解质门控晶体管的动态性能：朝向快速切换，低工作电压印刷电子产品
6. Core-multishell globular oxidation in a new TiAlNbCr alloy at high temperatures [O] . S. Q. Tang, S. J. Qu, A. H. Feng, -1

机译：新型TiAlNbCr合金在高温下的核-多壳球状氧化
7. Designing faster CMOS subthreshold circuits using transistor sizing and paralled transistor stacks [O] . Morteza Nabavi -1

机译：使用晶体管尺寸和并联晶体管堆叠设计更快的CMOS亚阈值电路
8. Preparation and Characterization of Molecule-Based Transistors with a 50 Nonometer Source-Drain Separation Using Shadow Deposition Techniques: Towards Faster, More Sensitive Molecule-Based Devices [R] . Jones, E. T., Chyan, O. M., Wrighton, M. S. 1987

机译：使用阴影沉积技术制备和表征具有50个非均源漏极分子的分子晶体管：朝着更快，更灵敏的分子为基础的器件

Fast multishell alloy transistors

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