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Nanoscale holographic interferometry for strain measurements in electronic devices

机译：纳米级全息干涉术，用于电子设备中的应变测量

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摘要

Strained silicon is now an integral feature of the latest generation of transistors and electronic devices because of the associated enhancement in carrier mobility. Strain is also expected to have an important role in future devices based on nanowires6 and in optoelectronic components7. Different strategies have been used to engineer strain in devices, leading to complex strain distributions in two and three dimensions8'9. Developing methods of strain measurement at the nanoscale has therefore been an important objective in recent years but has proved elusive in practice1'10: none of the existing techniques combines the necessary spatial resolution, precision and field of view. For example, Raman spectro-scopy or X-ray diffraction techniques can map strain at the micrometre scale, whereas transmission electron microscopy allows strain measurement at the nanometre scale but only over small sample areas. Here we present a technique capable of bridging this gap and measuring strain to high precision, with nanometre spatial resolution and for micrometre fields of view. Our method combines the advantages of moire techniques with the flexibility of off-axis electron holography and is also applicable to relatively thick samples, thus reducing the influence of thin-film relaxation effects.
机译：由于载流子迁移率的相关提高，因此应变硅现在已成为最新一代晶体管和电子设备不可或缺的特征。应变也有望在未来基于纳米线的设备6和光电组件7中发挥重要作用。已经采用了不同的策略来设计设备中的应变，从而导致二维和三维的复杂应变分布8'9。因此，发展纳米尺度的应变测量方法已成为近年来的重要目标，但事实证明在实践中难以捉摸1：现有技术均未结合必要的空间分辨率，精度和视野。例如，拉曼光谱法或X射线衍射技术可以在微米尺度上绘制应变图，而透射电子显微镜可以在纳米尺度上测量应变，但只能在很小的样品区域进行测量。在这里，我们提出一种能够弥合该间隙并以纳米空间分辨率和微米视场将应变测量到高精度的技术。我们的方法将莫尔条纹技术的优点与离轴电子全息术的灵活性相结合，并且还适用于相对较厚的样品，从而减少了薄膜弛豫效应的影响。

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  • 来源
    《Nature》 |2008年第7198期|1086-1089qt0003|共5页
  • 作者

    Martin Hyetch; Florent Houdellier; Florian Huee; Etienne Snoeck;

  • 作者单位

    CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France;

    CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France;

    CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France;

    CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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