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High-mobility ultrathin semiconducting films prepared by spin coating

机译：通过旋涂制备的高迁移率超薄半导体薄膜

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摘要

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (～50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS_(2-x)Se_x films, which exhibit n-type transport, large current densities (>10~5 A cm~(-2)) and mobilities greater than 10 cm~2 V~(-1) s~(-1)―an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).
机译：沉积和定制可靠的半导体薄膜的能力（最近特别关注超薄系统）对于现代固态电子设备是必不可少的。寻求同时提供高载流子迁移率和方便的基于溶液的沉积的薄膜半导体也是重要的研究方向，对新技术（例如柔性或可穿戴计算机，大面积高分辨率显示器和电子技术）的期望也很高。纸张）和低成本的设备制造。在这里，我们展示了一种基于高度溶解的肼前体的低温分解技术，用于旋涂超薄（〜50 A），晶体和连续金属硫属化物膜的技术。我们基于半导体SnS_（2-x）Se_x薄膜制造薄膜场效应晶体管（TFT），该薄膜具有n型传输，大电流密度（> 10〜5 A cm〜（-2））和迁移率更高小于10 cm〜2 V〜（-1）s〜（-1）-比以前报道的旋涂半导体的值高一个数量级。旋涂技术有望应用于一系列金属硫族化物，特别是基于主族金属的硫属元素化物，以及各种薄膜器件的制造（例如，太阳能电池，热电和存储设备）。

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