首页> 外文期刊>Nature >Antiferromagnetic order as the competing ground state in electron-doped Nd1.85Ce0.15CuO4
【24h】

Antiferromagnetic order as the competing ground state in electron-doped Nd1.85Ce0.15CuO4

机译:反铁磁阶作为电子掺杂Nd1.85Ce0.15CuO4中的竞争基态

获取原文
获取原文并翻译 | 示例
           

摘要

Superconductivity in the high-transition-temperature (high-T-c) copper oxides competes with other possible ground states(1),(2). The physical explanation for superconductivity can be constrained by determining the nature of the closest competing ground state, and establishing if that state is universal among the high-T-c materials. Antiferromagnetism has been theoretically predicted(3,4) to be the competing ground state. A competing ground state is revealed when superconductivity is destroyed by the application of a magnetic field, and antiferromagnetism has been observed in hole-doped materials under the influence of modest fields(5-12). None of the previous experiments have revealed the quantum phase transition from the superconducting state to the antiferromagnetic state, because they failed to reach the upper critical field B-c2. Here we report the results of transport and neutron-scattering experiments on electron-doped Nd1.85Ce0.15CuO4 (refs 13, 14), where B-c2 can be reached(15). The applied field reveals a static, commensurate, anomalously conducting long-range ordered antiferromagnetic state, in which the induced moment scales approximately linearly with the field strength until it saturates at B-c2. This and previous experiments on the hole-doped materials therefore establishes antiferromagnetic order as a competing ground state in the high-T-c copper oxide materials, irrespective of electron or hole doping. [References: 25]
机译:高转变温度(高T-c)铜氧化物中的超导性与其他可能的基态竞争(1),(2)。通过确定最接近的竞争基态的性质,并确定该态在高T-c材料中是否普遍,可以限制对超导性的物理解释。从理论上讲,反铁磁性是竞争性的基态(3,4)。当通过施加磁场破坏超导性时,就会显示出竞争性的基态,并且在中等电场的影响下,在掺杂空穴的材料中观察到了反铁磁性(5-12)。先前的实验都没有揭示出从超导状态到反铁磁状态的量子相变,因为它们没有达到上临界场B-c2。在这里我们报告了在电子掺杂的Nd1.85Ce0.15CuO4(参考文献13、14)上可以达到B-c2的输运和中子散射实验的结果(15)。所施加的磁场显示出一个静态的,相称的,异常地进行的远距离有序反铁磁状态,在该状态下,感应矩与场强成线性比例,直到它在B-c2处饱和。因此,对空穴掺杂材料的此实验和先前的实验将反铁磁顺序确立为高T-c氧化铜材料中的竞争基态,而与电子或空穴掺杂无关。 [参考:25]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号