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Modern microprocessor built from complementary carbon nanotube transistors

机译：由互补碳纳米管晶体管构建的现代微处理器

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摘要

Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large -scale integrated systems. Here we overcome these challenges to demonstrate a beyond-silicon microprocessor built entirely from CNFETs. This 16-bit microprocessor is based on the RISC-V instruction set, runs standard 32-bit instructions on 16 -bit data and addresses, comprises more than 14,000 complementary metal-oxide-semiconductor CNFETs and is designed and fabricated using industry-standard design flows and processes. We propose a manufacturing methodology for carbon nanotubes, a set of combined processing and design techniques for overcoming nanoscale imperfections at macroscopic scales across full wafer substrates. This work experimentally validates a promising path towards practical beyond-silicon electronic systems.
机译：电子产品正朝着重大的范式转变，因为硅晶体管的规模化不再产生历史性的能源效率优势，从而推动了对超越硅纳米技术的研究。尤其是，基于碳纳米管场效应晶体管（CNFET）的数字电路有望带来巨大的能源效率收益，但是无法完美地控制碳纳米管中固有的纳米级缺陷和可变性，已无法实现超大规模集成系统。在这里，我们克服了这些挑战，展示了完全由CNFET构成的硅外微处理器。该16位微处理器基于RISC-V指令集，在16位数据和地址上运行标准的32位指令，包括14,000多种互补金属氧化物半导体CNFET，并采用行业标准设计进行设计和制造流程和流程。我们提出了一种碳纳米管的制造方法，一套综合的处理和设计技术，可以在整个晶圆基板上以宏观尺度克服纳米级缺陷。这项工作通过实验验证了朝着实际的超越硅电子系统发展的有希望的道路。

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  • 来源
    《Nature》 |2019年第7771期|595-602|共8页
  • 作者

    Hills Gage; Lau Christian; Wright Andrew; Fuller Samuel; Bishop Mindy D.; Srimani Tathagata; Kanhaiya Pritpal; Ho Rebecca; Amer Aya; Stein Yosi; Murphy Denis; Arvind; Chandrakasan Anantha; Shulaker Max M.;

  • 作者单位

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    ADI, Wilmington, MA USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    ADI, Wilmington, MA USA;

    ADI, Wilmington, MA USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

    MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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