Development of GaAs-on-Si wafers using high-speed rotating-substrate-type MOCVD system

Akihiro Moritani; Aiji yabe; Takashi Aigo

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Development of GaAs-on-Si wafers using high-speed rotating-substrate-type MOCVD system

机译：使用高速旋转基板型MOCVD系统开发硅上GaAs晶片

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GaAs-on-Si wafers having GaAs-AlGaAs epitaxial layers grown on a Si substrate have been developed by using a metal-organic chemical vapor deposition (MOCVD) system of the high-speed rotating substrate type. High-Electron mobility transistor (HEMT) and metal-semiconductor field Effect transistor (MESFET) devices have been test-fabricated to evaluate The performance of the GaAs-On-Si wafers.

机译：通过使用高速旋转基板类型的金属有机化学气相沉积（MOCVD）系统，已经开发了具有在Si基板上生长的GaAs-AlGaAs外延层的GaAs-on-Si晶片。高电子迁移率晶体管（HEMT）和金属半导体场效应晶体管（MESFET）器件已经过测试制造，以评估GaAs-On-Si晶片的性能。

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《NIPPON STEEL TECHNICAL REPORT》 |1997年第73期|p.7-12|共6页
作者
Akihiro Moritani; Aiji yabe; Takashi Aigo;
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正文语种 eng
中图分类冶金工业;炼钢;
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专利

1. Development of GaAs-on-Si wafers using high-speed rotating-substrate-type MOCVD system [J] . Akihiro Moritani, Aiji yabe, Takashi Aigo Nippon Steel Technical Report . 1997,第73期

机译：使用高速旋转基板型MOCVD系统开发硅上GaAs晶片
2. High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems [J] . Yamada S, Ohnishi T, Kakegawa T, Solid State Communications . 2005,第10期

机译：通过量产MOCVD系统制备的大规模GaN / AlGaN晶片界面上的高质量二维电子气
3. Development of Low Temperature Al_2O_3 MOCVD for Ferroelectric Film Passivation on 8" Wafers [J] . C. E. RICE, J. D. CUCHIARO, S. SUN Integrated Ferroelectrics . 2003,第1期

机译：低温Al_2O_3 MOCVD技术在8“晶圆上铁电薄膜钝化的研究进展
4. Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration [C] . Skordas S., Tulipe D. C. La, Winstel K., Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on . 2012

机译：用于3D系统集成的晶圆级氧化物熔合和晶圆减薄开发：用于TSV-last集成的氧化物熔合晶圆键合和晶圆减薄开发
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Development of GaAs-on-Si wafers using high-speed rotating-substrate-type MOCVD system

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