首页> 外文会议>Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on >Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration
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Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration

机译:用于3D系统集成的晶圆级氧化物熔合和晶圆减薄开发:用于TSV-last集成的氧化物熔合晶圆键合和晶圆减薄开发

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摘要

300mm Si wafer-scale oxide fusion bonding and mechanical/wet etch assisted wafer thinning processes were combined with a TSV-last 3D integration strategy to fabricate electrical open/short yield learning on through-wafer electrical TSV test chains.
机译:将300毫米Si晶圆级氧化物熔接和机械/湿法蚀刻辅助晶圆减薄工艺与TSV-last 3D集成策略结合在一起,以在整个晶圆电TSV测试链上制造电开放/短成品率学习。

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