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Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal

机译：InSb块状晶体中单晶块的取向错误分析

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摘要

A model for calculation of the angle of misorientation between the reflecting crystallographic planes and the plane of the semiconductor surface of a sample by means of high-resolution X-ray diffractometry has been developed. The model can minimize mechanical instrument errors, including the positioning and moving inaccuracies, and determine the optimum parameters of sample position with respect to the incident radiation for correct investigations of the perfection of the crystal structure. The principle of conduction of the experiment and the mathematical model used for processing of the obtained data are described. To find macrodefects of the crystal structure, in particular, blocks, the map of the distribution of parameters of the the rocking curve of the entire sample was obtained using the developed model. This allowed determination of the blocks boundaries and their mutual orientation in the directions longitudinal relative to the wafer. The model was tested on a wafer cut from a bulk indium antimonide single crystal grown by the Czochralski method and subjected to chemical-dynamic and chemical-mechanical polishing.
机译：已经开发了用于通过高分辨率X射线衍射法计算反射晶体学平面与样品的半导体表面平面之间的取向差角的模型。该模型可以使机械仪器误差（包括定位和移动误差）最小化，并针对入射辐射确定样品位置的最佳参数，以便正确研究晶体结构的完善性。描述了实验的进行原理和用于处理获得的数据的数学模型。为了找到晶体结构，特别是块的宏观缺陷，使用开发的模型获得了整个样品的摇摆曲线的参数分布图。这允许确定块边界及其在相对于晶片纵向的方向上的相互取向。在通过切克劳斯基（Czochralski）方法生长的块状锑化铟单晶上切割的晶片上测试了该模型，并对其进行了化学动力学和化学机械抛光。

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  • 来源
    《NTT R&D》 |2018年第3期|309-313|共5页
  • 作者

    Shabrin A. D.; Goncharov A. E.; Pashkeev D. A.; Lyalikov A. V.; Egorov A. V.;

  • 作者单位

    Orion Res & Prod Assoc, Moscow 111538, Russia;

    Orion Res & Prod Assoc, Moscow 111538, Russia;

    Orion Res & Prod Assoc, Moscow 111538, Russia;

    Orion Res & Prod Assoc, Moscow 111538, Russia;

    Orion Res & Prod Assoc, Moscow 111538, Russia;

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