Precision Etching of Thin Doped Silicon Layers

Borovkova A. Yu.; Grischina T. N.; Matyuhina E. S.

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Precision Etching of Thin Doped Silicon Layers

机译：掺杂硅薄层的精密蚀刻

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The optimum etchant composition for precise removal of a thin high-doped silicon gettering layer is determined. It is found that the best-controlled etching is provided by the following composition: HNO3: HF: CH3COOH = 40: 1: 1. This composition etches the entire gettering layer away while preserving the required thickness of the contact layer, which prevents the space-charge region of the p-n junction from emerging at the back surface of the base of a photosensitive element. Thus, this etchant provides an opportunity to reduce the magnitude of dark currents and raise the percentage yield.

机译：确定了用于精确去除薄的高掺杂硅吸收层的最佳蚀刻剂成分。已经发现，由以下成分提供了最佳控制的蚀刻：HNO3：HF：CH3COOH = 40：1：1。该成分蚀刻掉整个吸气层，同时保留了所需的接触层厚度，从而避免了空间pn结的电荷区从光敏元件底部的背面露出。因此，这种蚀刻剂提供了减少暗电流的幅度并提高产率的机会。

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《NTT R&D》 |2018年第3期|303-305|共3页
作者
Borovkova A. Yu.; Grischina T. N.; Matyuhina E. S.;
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Orion Res & Prod Assoc, Moscow 111538, Russia;

Orion Res & Prod Assoc, Moscow 111538, Russia;

Orion Res & Prod Assoc, Moscow 111538, Russia;

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Precision Etching of Thin Doped Silicon Layers

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