Characteristics of heteroepitaxial structures Al (x) Ga1-x N for p-i-n diode focal plane arrays

Smirnov D. V.; Boltar K. O.; Sednev M. V.; Sharonov Yu. P.

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Characteristics of heteroepitaxial structures Al (x) Ga1-x N for p-i-n diode focal plane arrays

机译：p-i-n二极管焦平面阵列的异质外延结构Al（x）Ga1-x N的特性

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Mesaelements of the focal plane array (FPA) of p-i-n diodes based on Al (x) Ga1-x N for p-i-n heteroepitaxial structures (HESs) grown by the molecular-beam epitaxy and hydride epitaxy methods with the use of metalorganic compounds are formed. Elements of 320 x 256 FPAs with a pitch of 30 mu m are separated by means of ion-beam etching through a photoresist mask in the argon ion stream produced by the Kaufmann ion source in a vacuum plant. To determine the required etching depth, contact profilometry and ultraviolet spectrophotometry methods allowing one to determine positions of the n-layer and sufficient etching depth of the sample are used. The thickness accuracy of the HES functional layers stated in manufacturer's certificates does not exceed 28%. Rates of ion-beam etching of Al (x) Ga1-x N for p-i-n layers with different compositions are determined.

机译：形成了基于Al（x）Ga1-x N的p-i-n二极管的焦平面阵列（FPA）的介素，用于通过分子束外延和氢化物外延方法使用金属有机化合物生长的p-i-n异质外延结构（HES）。通过离子束蚀刻，通过光致抗蚀剂掩模，在真空装置中由考夫曼离子源产生的氩离子流中，将间距为30μm的320 x 256 FPA的元素分开。为了确定所需的蚀刻深度，使用接触轮廓光度法和紫外分光光度法来确定n层的位置以及样品的足够蚀刻深度。制造商证书中所述的HES功能层的厚度精度不超过28％。确定具有不同组成的p-i-n层的Al（x）Ga1-x N的离子束刻蚀速率。

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《Journal of Communications Technology and Electronics》 |2016年第3期|358-362|共5页
作者
Smirnov D. V.; Boltar K. O.; Sednev M. V.; Sharonov Yu. P.;
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作者单位

OAO NPO Orion, Ul Kosinskaya 9, Moscow 111538, Russia;

OAO NPO Orion, Ul Kosinskaya 9, Moscow 111538, Russia|State Univ, Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141700, Moscow Oblast, Russia;

OAO NPO Orion, Ul Kosinskaya 9, Moscow 111538, Russia;

OAO NPO Orion, Ul Kosinskaya 9, Moscow 111538, Russia;

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正文语种 eng
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关键词
AlxGa1-xN; GaN; heteroepitaxial structures; p-i-n diode; ion-beam etching; visible-blind subband; solar-blind subband; absorption (transmission) edge;

机译：AlxGa1-xN;GaN;异质外延结构;p-i-n二极管;离子束刻蚀;可见盲子带;太阳盲子带;吸收（透射）边缘;

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机译：基于异质外延InGaAs / InP结构的焦平面阵列的平面光电二极管的研究
2. 2-in-1 Diodes with a Contact-Sidewall Structure for Small Pixel Pitch in Silicon-on-Insulator (SOI) Uncooled Infrared (IR) Focal Plane Arrays [J] . Tomohiro Maegawa, Daisuke Fujisawa, Hisatoshi Hata, Sensors and materials . 2014,第4期

机译：具有接触侧壁结构的2合1二极管，用于绝缘体上硅（SOI）非冷却红外（IR）焦平面阵列中的小像素间距
3. A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array [J] . Dong-Su Kim, Forrest S.R. IEEE Photonics Technology Letters . 1996,第4期

机译：单片集成InGaAs-InP p-i-n / JFET焦平面阵列
4. Heteroepitaxial 96 X 128 lead chalcogenide on silicon infrared focal plane array for thermal imaging [C] . Werner Buttler, HansZogg, Dmitri Zimin, Annual International Symposium on Aerospace/Defense Sensing, Simulation and Controls . 2001

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5. Antenna-coupled tunnel diodes for dual-band millimeter-wave/infrared focal-plane arrays. [D] . Abdel Rahman, Mohamed Ramy. 2004

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6. Customisable X-ray fluorescence photodetector with submicron sensitivity using a ring array of silicon p-i-n diodes [O] . Phil S. Yoon -1

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8. Flip-Chip Bonding Equipment for UV Focal Plane Array Development Based on GaN/AlGaN p-i-n Photodiodes. [R] . Schetzina, J. 2001

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Characteristics of heteroepitaxial structures Al (x) Ga1-x N for p-i-n diode focal plane arrays

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