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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >Development of a thinned back-illuminated CMOS active pixel sensor for extreme ultraviolet spectroscopy and imaging in space science
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Development of a thinned back-illuminated CMOS active pixel sensor for extreme ultraviolet spectroscopy and imaging in space science

机译：开发用于太空科学中极紫外光谱和成像的超薄背照式CMOS有源像素传感器

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摘要

We describe our programme to develop a large-format, science-grade, monolithic CMOS active pixel sensor for future space science missions, and in particular an extreme ultraviolet (EUV) spectrograph for solar physics studies on ESA's Solar Orbiter. Our route to EUV sensitivity relies on adapting the back-thinning and rear-illumination techniques first developed for CCD sensors. Our first large-format sensor consists of 4k x 3k 5 μm pixels fabricated on a 0.25 μm CMOS imager process. Wafer samples of these sensors have been thinned by e2v technologies with the aim of obtaining good sensitivity, at EUV wavelengths. We present results from both front- and back-illuminated versions of this sensor. We also present our plans to develop a new sensor of 2k x 2k 10μm pixels, which will be fabricated on a 0.35 μm CMOS process. In progress towards this goal, we have designed a test-structure consisting of six arrays of 512 x 512 10 μm pixels. Each of the arrays has been given a different pixel design to allow verification of our models, and our progress towards optimizing a design for minimal system readout noise and maximum dynamic range. These sensors will also be back-thinned for characterization at EUV wavelengths.
机译：我们描述了我们的程序，该程序旨在为未来的太空科学任务开发大型科学级单片CMOS有源像素传感器，尤其是用于ESA太阳轨道器的太阳物理研究的极紫外（EUV）光谱仪。我们提高EUV灵敏度的方法依赖于适应最早为CCD传感器开发的后减薄和后照明技术。我们的首款大幅面传感器由采用0.25μmCMOS成像器工艺制造的4k x 3k 5μm像素组成。这些传感器的晶圆样品已通过e2v技术进行了稀释，目的是在EUV波长下获得良好的灵敏度。我们介绍了此传感器的前照明和后照明版本的结果。我们还提出了开发2k x 2k10μm像素的新型传感器的计划，该传感器将在0.35μmCMOS工艺上制造。为了实现这一目标，我们设计了一种测试结构，该结构由六个512 x 512 10μm像素阵列组成。每个阵列都有不同的像素设计，可以验证我们的模型，以及我们在优化设计以最小化系统读数噪声和最大动态范围方面的进展。这些传感器还将在EUV波长下进行薄化表征。

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