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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions
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A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions

机译：注入稀土离子的GaN纳米线的光，阴极和电致发光比较研究

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摘要

GaN nanowires (NWs) implanted with Europium, Praseodymium and Erbium ions were analysed by Pho-toluminescence (PL), Cathodoluminescence (CL) and Ionoluminescence (IL). The red ~5D_0 →~7F_2 and ~3P_0 →~ 3F_2 luminescence of the Eu~(3+) (4f~6) and Pr~(3+) (4f~2) ions, respectively, was optically activated after the lattice damage was recovered by thermal annealing. On the contrary, for the case of the erbium implanted NWs no intra-4f~11 transitions were identified in the visible and infra-red spectral range. Besides the lanthanide luminescence, the heat treated GaN NWs exhibit the band edge recombination and a deep level emission in the yellow spectral range when the samples are excited by photons, electrons and protons with energies of 3.8 eV, 5.0 keV and 2.0 MeV, respectively. At RT, the dependence of GaN NW luminescence intensity with the illumination/irradiation time was analysed using PL, CL and IL. The effects of the different excitation mechanisms are discussed to explain the observation that the broad emission bands suffer a luminescence quenching for the GaN NWs irradiated with energetic particles and photons. The influence of the irradiation on the optical properties of the GaN NWs is discussed and models for the recombination processes are established.
机译：通过光致发光（PL），阴极发光（CL）和电致发光（IL）分析了注入Euro，se和Er离子的GaN纳米线（NW）。 Eu〜（3+）（4f〜6）和Pr〜（3+）（4f〜2）离子的红色〜5D_0→〜7F_2和〜3P_0→〜3F_2发光分别在晶格损伤后被光学激活通过热退火回收。相反，对于注入N的NW，在可见光谱和红外光谱范围内均未发现4f〜11内跃迁。除镧系元素发光外，当样品分别被能量为3.8 eV，5.0 keV和2.0 MeV的光子，电子和质子激发时，经热处理的GaN NW在黄色光谱范围内显示出能带边缘复合和深能级发射。在室温下，使用PL，CL和IL分析了GaN NW发光强度与照明/照射时间的关系。讨论了不同激发机制的作用，以解释观察到宽发射带遭受高能粒子和光子辐照的GaN NW的发光猝灭的现象。讨论了辐照对GaN NWs光学性能的影响，并建立了复合过程的模型。

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    J. Rodrigues; S.M.C. Miranda; M. Peres; E. Nogales; L.C. Alves; E. Alves; G. Tourbot; B. Daudin; B. Mendez; K. Lorenz; T. Monteiro;

  • 作者单位

    Departamento de Fisica e I3N, Universidade de Aveiro, Aveiro 3810-193, Portugal;

    IST/CFN, Institute Superior Tecnico, Campus de Fisica Nuclear, Universidade Tecnica de Lisboa, EN10, Sacavem 2686-953, Portugal;

    Departamento de Fisica e I3N, Universidade de Aveiro, Aveiro 3810-193, Portugal;

    Departamento de Fisica de Materiales, Universidad Complutense, Madrid 28040, Spain;

    IST/CFN, Institute Superior Tecnico, Campus de Fisica Nuclear, Universidade Tecnica de Lisboa, EN10, Sacavem 2686-953, Portugal ,Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, Lisboa 1649-003, Portugal;

    IST/CFN, Institute Superior Tecnico, Campus de Fisica Nuclear, Universidade Tecnica de Lisboa, EN10, Sacavem 2686-953, Portugal ,Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, Lisboa 1649-003, Portugal;

    CEA/CNRS Group,'Nanophysique et Semiconducteurs', INAC, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    CEA/CNRS Group,'Nanophysique et Semiconducteurs', INAC, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

    Departamento de Fisica de Materiales, Universidad Complutense, Madrid 28040, Spain;

    IST/CFN, Institute Superior Tecnico, Campus de Fisica Nuclear, Universidade Tecnica de Lisboa, EN10, Sacavem 2686-953, Portugal ,Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, Lisboa 1649-003, Portugal;

    Departamento de Fisica e I3N, Universidade de Aveiro, Aveiro 3810-193, Portugal;

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  • 正文语种 eng
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  • 关键词

    GaN; Nanowires; Rare-earth; Ion implantation; PL; CL; IL;

    机译：氮化镓;纳米线;稀土;离子注入;PL;CL;白介素;

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