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首页> 外文期刊>Optical and quantum electronics >Standard model of a photorefractive effect and moving grating wave-mixing in semi-insulating GaAs quantum wells
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Standard model of a photorefractive effect and moving grating wave-mixing in semi-insulating GaAs quantum wells

机译:半绝缘GaAs量子阱中光折变效应和移动光栅波混频的标准模型

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摘要

Theoretical analysis of photorefractive GaAs/AlGaAs multiple quantum well structure in a wave-mixing geometry with moving interference pattern is presented. The numerical calculations for arbitrary value of the fringe contrast were carried out by solving material equations within the band transport model with bipolar conductivity. An influence of the modulation depth and the nonlinear transport of hot-electrons on the photorefractive response is examined. Theoretical predictions are compared with the available results of moving grating experiments.
机译:提出了具有移动干涉图样的混波几何结构中光折变GaAs / AlGaAs多量子阱结构的理论分析。通过求解带双极电导率的带传输模型中的材料方程,对条纹对比度的任意值进行了数值计算。研究了调制深度和热电子的非线性传输对光折射响应的影响。将理论预测与移动光栅实验的可用结果进行比较。

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