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Operation limitation of CMP in back-thinning process of InSb IRFPAs

机译：InSb IRFPA减薄过程中CMP的操作限制

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摘要

InSb infrared focal plane arrays (IRFPAs) detector, active in 3-5 μm range, has been widely used in military fields. In the fabrication of InSb IRFPAs, the InSb chip is usually thinned down to 10 μm by means of both the chemical mechanical polishing (CMP) process and the wet chemical etching process. In order to confirm the operation limitation of the CMP process, in light of the proposed equivalent method, we create the deformation analysis modeling of InSb IRFPAs. In order to learn the evolving tendency of the deformation distribution characteristic appearing on the top surface of InSb IRFPAs during the thinning process of InSb chip, we reduce the thickness of InSb chip from 300 μm down to 6 μm in a suitable step. And the simulated Z-components of strain distribution are identical with the measured deformation distribution, appearing on the top surface of InSb IRFPAs with different InSb chip thickness values. According to the dependence of the deformation distribution characteristic of InSb IRFPAs on the thickness of InSb chip, we conclude that the thickness of InSb chip should not be thinner than 30 μm after the CMP process is executed completely. A series of thickness values of GaSb substrate, which is thinned down to 60, 50 or 30-40 μm by CMP process in the fabrication of type-IIsuperlattice IRPFAs, support our conclusion. All these cases prove that the operation limitation of the CMP process proposed in this paper is accurate and acceptable in the fabrication of IRFPAs.
机译：InSb红外焦平面阵列（IRFPA）检测器在3-5μm范围内有效，已广泛用于军事领域。在InSb IRFPA的制造中，通常通过化学机械抛光（CMP）工艺和湿法化学蚀刻工艺将InSb芯片的厚度减薄至10μm。为了确定CMP工艺的操作局限性，根据提出的等效方法，我们建立了InSb IRFPA的变形分析模型。为了了解在InSb芯片薄化过程中InSb IRFPA顶表面上出现的变形分布特征的演变趋势，我们通过适当的步骤将InSb芯片的厚度从300μm减小到6μm。应变分布的模拟Z分量与测得的变形分布相同，出现在具有不同InSb芯片厚度值的InSb IRFPA的顶面上。根据InSb IRFPA的形变分布特性对InSb芯片厚度的依赖性，我们得出结论，在CMP工艺完全执行之后，InSb芯片的厚度不应小于30μm。在II型超晶格IRPFA的制造过程中，通过CMP工艺将GaSb衬底厚度减至60、50或30-40μm的一系列厚度值支持了我们的结论。所有这些情况证明，本文提出的CMP工艺的操作限制是正确的，并且在制造IRFPA中是可以接受的。

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  • 来源
    《Optical and quantum electronics》 |2017年第6期|211.1-211.11|共11页
  • 作者

    Meng Qingduan; Zhang Xiaoling; Lü Yanqiu; Si Junjie;

  • 作者单位

    School of Electrical Engineering, Henan University of Science and Technology, Luoyang, 471023, China,Academy Key Laboratory of Science and Technology on Infrared Detector, Luoyang, China;

    School of Electrical Engineering, Henan University of Science and Technology, Luoyang, 471023, China;

    Academy Key Laboratory of Science and Technology on Infrared Detector, Luoyang, China;

    Academy Key Laboratory of Science and Technology on Infrared Detector, Luoyang, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Backside thinning process; Deformation distribution; Infrared focal plane arrays;

    机译：背面薄化工艺;变形分布;红外焦平面阵列;

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