Synthesis and properties of As_xTe_(100-x) films prepared by plasma deposition via elemental As and Te

著录项

• 来源
  《Optical and quantum electronics》 |2017年第8期|274.1-274.11|共11页
• 作者

  Leonid Mochalov; Aleksey Nezhdanov; Askold Strikovskiy; Mikhail Gushin; Giuseppe Chidichimo; Giovanni De Filpo; Aleksandr Mashin;

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• 作者单位

  Lobachevsky State University of Nizhny Novgorod, Nizhniy Novgorod, Russia 603950,Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Nizhniy Novgorod, Russia 603950;

  Lobachevsky State University of Nizhny Novgorod, Nizhniy Novgorod, Russia 603950;

  Institute for Applied Physics of the Russian Academy of Sciences, Nizhniy Novgorod, Russia;

  Institute for Applied Physics of the Russian Academy of Sciences, Nizhniy Novgorod, Russia;

  Department of Chemistry, University of Calabria, P. Bucci-15c, Rende, CS, Italy;

  Department of Chemistry, University of Calabria, P. Bucci-15c, Rende, CS, Italy;

  Lobachevsky State University of Nizhny Novgorod, Nizhniy Novgorod, Russia 603950;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  As_xTe_(100-x); Chalcogenide films; PECVD;

  机译：As_xTe_（100-x）;硫属化物膜;化学气相沉积;