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Investigation of N-face AlGaN ultraviolet light-emitting diodes with composition-varying AlGaN electron blocking layer

机译：具有变化成分的AlGaN电子阻挡层的N面AlGaN紫外发光二极管的研究

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摘要

The optical and physical properties of N-face AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) are investigated numerically and compared with Ga-face AlGaN based UV-LEDs. A composition-varying AlGaN electron blocking layer (EBL) is introduced in the N-face AlGaN UV-LEDs. Detailed analysis has been carried out on the electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate. The calculated results demonstrate that theN-face UV-LED with composition-varying AlGaN EBL reveals enhanced performance than that of the Ga-face UV-LED with the same structure.
机译：数值研究了N面基于AlGaN的紫外发光二极管（UV-LED）的光学和物理特性，并将其与Ga面基于AlGaN的紫外LED进行了比较。在N面AlGaN UV-LED中引入了成分变化的AlGaN电子阻挡层（EBL）。已经对电致发光光谱，功率-电流性能曲线，能带图，载流子浓度和辐射复合率进行了详细分析。计算结果表明，具有相同成分的AlGaN EBL的N面UV-LED与具有相同结构的Ga面UV-LED相比，具有更高的性能。

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  • 来源
    《Optical and quantum electronics》 |2016年第1期|752-760|共9页
  • 作者

    Chujun Yao; Guofeng Yang; Yuejing Li; Rui Sun; Qing Zhang; Jin Wang; S. M. Gao;

  • 作者单位

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

    School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    AlGaN; N-face; Ultraviolet light-emitting diodes; Electron blocking layer;

    机译：氮化铝镓;N面紫外线发光二极管;电子阻挡层;

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