Theoretical estimation of optical gain in Tin-incorporated group Ⅳ alloy based transistor laser

Ravi Ranjan; Mukul K. Das

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Theoretical estimation of optical gain in Tin-incorporated group Ⅳ alloy based transistor laser

机译：掺锡Ⅳ族合金晶体管激光器光学增益的理论估计

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We have calculated the electronic band structure and polarization dependent optical gain in a strain balanced Si_xGe_ySn_(1-x-y)/Ge_zSn_(1-z) based transistor laser (TL) with Ge_zSn_(1-z) single quantum well (QW) in the base. Design consideration for QW is also addressed to ensure moderate carrier and optical confinement. A significant TE mode optical gain is obtained in mid infra red region for the transition of Γ valley conduction band to heavy hole valence band. Optical gain in the QW plays an important role in determining the optical characteristics of Tin (Sn) incorporated group Ⅳ material based TL.

机译：我们已经计算出在应变平衡的基于Si_xGe_ySn_（1-xy）/ Ge_zSn_（1-z）的晶体管激光器（TL）中具有Ge_zSn_（1-z）单量子阱（QW）的电子能带结构和偏振相关的光学增益。基础。还考虑了QW的设计考虑因素，以确保适当的载流子和光学限制。对于Γ谷导带到重空穴价带的跃迁，在中红外区域获得了显着的TE模式光学增益。 QW中的光学增益在确定掺入锡（Sn）的Ⅳ族材料基TL的光学特性中起重要作用。

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来源
《Optical and quantum electronics》 |2016年第3期|201.1-201.11|共11页
作者
Ravi Ranjan; Mukul K. Das;
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作者单位

UGC-SAP Research Laboratory, Department of Electronics Engineering, Indian School of Mines, Dhanbad, India;

UGC-SAP Research Laboratory, Department of Electronics Engineering, Indian School of Mines, Dhanbad, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Transistor laser; GeSn alloy; Compressive strain; TE polarized gain; Quantum well; Threshold carrier density;

机译：晶体管激光器;GeSn合金;压缩应变TE极化增益;量子阱;门限载流子密度;

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1. Performance analysis of tin-incorporated group-IV alloy based transistor laser [J] . Ranjan Ravi, Das Mukul K., Kumar S. Optics & Laser Technology . 2018,第期

机译：锡掺入型IV基晶体管激光器的性能分析
2. Theoretical study on optical gain characteristics of Ge1-x Snx alloy for short-wave infrared laser [J] . 张东亮, 成步文, 薛春来, 中国物理：英文版 . 2015,第002期

机译：Ge1-x Snx合金短波红外激光光学增益特性的理论研究
3. Theoretical analysis on optical frequency response of tunnel-junction transistor lasers operated in different configurations [J] . Tung Chien-Ting, Chang Shu-Wei, Wu Chao-Hsin Journal of Applied Physics . 2019,第2期

机译：不同配置下的隧道结晶体管激光器光频率响应的理论分析
4. Analysis of optical gain in a Tin-incorporated group IV alloy-based transistor laser for a mid-infrared application [C] . Ravi Ranjan, Mukul Kr. Das International Conference on Advancement of Computer Communication and Electrical Technology . 2017

机译：用于中红外应用的锡掺入型IV基晶体管激光器中的光学增益分析
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机译：基于AlGaN的深紫色激光器中的光学增益和模态损耗=基于Algan的UVC激光二极管中的光学利润和模态损耗
6. Estimation of Residual Stress in Selective Laser Melting of a Zr-Based Amorphous Alloy [O] . Wei Xing, Di Ouyang, Ning Li, 2018

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7. Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers [O] . Fellaoui K., Abouelaoualim D., Elkadadra A., 2015

机译：GaN / AlxGa1-x N量子阱激光器光学增益的理论分析。

Theoretical estimation of optical gain in Tin-incorporated group Ⅳ alloy based transistor laser

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